U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Bruce D. Ravel (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 51 - 57 of 57

Combined EXAFS and First-Principles Theory Study of Pb 1-x Ge x Te

December 1, 1999
Author(s)
Bruce D. Ravel, Eric J. Cockayne, E Newville, K M. Rabe
The narrow band-gap semiconductor Pb 1-xGe xTe has a low-temperature ferroelectric rhombohedral phase whose average structure is a distorted rocksalt structure. We have measured the Extended X-Ray-Absorption Fine-Structure (EXAFS) spectra of Pb 1-xGe xTe

X-Ray-Absorption Edge Separation Using Diffraction Anomalous Fine-Structure

July 1, 1999
Author(s)
Bruce D. Ravel, Charles E. Bouldin, H Renevier, J -. Hodeau, J -. Berar
When two or more absorption edges in a material are sufficiently close in energy, Extended X-ray-Absorption Fine-Structure (EXAFS) spectroscopy may be of limited utility as the usable data range above the lower energy edge is truncated by the presence of

The Local Structure of Ferroelectric Pb 1-x Ge x Te

May 1, 1999
Author(s)
Bruce D. Ravel, Eric J. Cockayne, K M. Rabe
The narrow band-gap semiconductor Pb_{1-x}Ge_xTe has a low-temperature ferroelectric rhombohedral phase whose average structure is a distorted rock salt structure. We have measured the Extended X-ray-Absorption Fine-Structure spectra of Pb_{1-x}Ge_xTe with

Diffraction Anomalous Fine Structure Study of Strained GA 1-x In x As on GaAs(001)

August 20, 1998
Author(s)
Joseph C. Woicik, J O. Cross, Charles E. Bouldin, Bruce D. Ravel, J G. Pellegrino, B W. Steiner, S G. Bompadre, L B. Sorensen, K E. Miyano, J P. Kirkland
Diffraction anomalous fine-structure measurements performed at both the Ga and As K edges have determined the Ga-As bond length to be 2.442 ± 0.005 {Angstrom} in a buried, 213 {Angstrom} thick Ga^0.78^In 0.22As layer grown coherently on GaAs(001). This