U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Jonathan E. Guyer (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 51 - 67 of 67

Abstracts for the MSEL Assessment Panel, March 2001

January 26, 2001
Author(s)
Leslie E. Smith, Alamgir Karim, Leonid A. Bendersky, C Lu, J J. Scott, Ichiro Takeuchi, Kathleen M. Flynn, Vinod K. Tewary, Davor Balzar, G A. Alers, Stephen E. Russek, Charles C. Han, Haonan Wang, William E. Wallace, Daniel A. Fischer, K Efimenko, Wen-Li Wu, Jan Genzer, Joseph C. Woicik, Thomas H. Gnaeupel-Herold, Henry J. Prask, Charles F. Majkrzak, Norman F. Berk, John G. Barker, Charles J. Glinka, Eric K. Lin, Ward L. Johnson, Paul R. Heyliger, David T. Read, R R. Keller, J Blendell, Grady S. White, Lin-Sien H. Lum, Eric J. Cockayne, Igor Levin, C E. Johnson, Maureen E. Williams, Gery R. Stafford, William J. Boettinger, Kil-Won Moon, Daniel Josell, Daniel Wheeler, Thomas P. Moffat, W H. Huber, Lee J. Richter, Clayton S. Yang, Robert D. Shull, R A. Fry, Robert D. McMichael, William F. Egelhoff Jr., Ursula R. Kattner, James A. Warren, Jonathan E. Guyer, Steven P. Mates, Stephen D. Ridder, Frank S. Biancaniello, D Basak, Jon C. Geist, Kalman D. Migler
Abstracts relating to research and development in the NIST Materials Science and Engineering Laboratory (MSEL) are presented for a poster session to be presented to the 2001 MSEL Assessment Panel.

NCT In-Situ Probes and the MBE Growth of Compound Semiconductors

October 11, 2000
Author(s)
Joseph G. Pellegrino, Jonathan E. Guyer, Donald A. Gajewski
Our research is centered on the use of in-situ measurement probes that monitor semiconductor growth. Our goal is to correlate material parameters observed during growth with device performance. A goal of this presentation is to develop collaborations that

Diffuse Reflectance Spectroscopy for In Situ Process Monitoring and Control During Molecular Beam Epitaxy Growth of InGaAs Pseudomorphic High Electron Mobility Transistors

September 29, 2000
Author(s)
Jonathan E. Guyer, W. F. Tseng, Joseph G. Pellegrino
We report the use of diffuse reflectance spectroscopy for active, closed-loop control of substrate temperature during the growth of a modulation doped heterostructure. Measurement and control of substrate temperature is a common difficulty for molecular

In Situ Diffuse Reflectance Spectroscopy for Measurement and Control of III-V Molecular Beam Epitaxy

March 17, 2000
Author(s)
Jonathan E. Guyer, W. F. Tseng, W. R. Thurber, Eric M. Vogel, Monica D. Edelstein, Donald A. Gajewski, Joseph G. Pellegrino
We report the use of diffuse reflectance spectroscopy for active, closed-loop control of substrate temperature during the growth of a modulation doped heterostructure. Measurement and control of substrate temperature is a common difficulty for molecular

In situ Metrology During the Growth of Compound Semiconductors by Molecular Beam Epitaxy

February 9, 2000
Author(s)
Donald A. Gajewski, Jonathan E. Guyer, Nhan Van Nguyen, Joseph G. Pellegrino
In this poster, we present the optical response of thin film compound semiconductors measured using in situ spectroscopic ellipsometry (SE), at growth temperatures ((180 to 600) 0C), during the growth by molecular beam epitaxy (MBE). We will focus on in