February 19, 2017
Author(s)
Lawrence P. Cook, Richard E. Cavicchi, Yanbao Zhang, Mark D. Vaudin, Christopher B. Montgomery, William F. Egelhoff Jr., Martin L. Green, Leslie Allen
A MEMS-based differential scanning calorimeter (DSC) has been used to characterize the Ni/Si interfacial reaction in thin films at ramp rates of 940 C/s and 3760 C/s. The DSC devices were fabricated using CMOS semiconductor processing technology, and were