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Search Publications by: William A. Kimes (Fed)

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Displaying 26 - 50 of 66

Time-resolved surface infrared spectroscopy during atomic layer deposition

September 10, 2013
Author(s)
Brent A. Sperling, John J. Hoang, William A. Kimes, James E. Maslar
This work presents a novel method for obtaining surface infrared spectra with sub-second time resolution during atomic layer deposition (ALD). Using a rapid-scan Fourier transform infrared (FT-IR) spectrometer, we obtain a series of interferograms (120 ms)

Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors

April 30, 2013
Author(s)
Hao Zhu, Curt A. Richter, Erhai Zhao, John E. Bonevich, William A. Kimes, Hyuk-Jae Jang, Hui Yuan, Abbas Arab, Oleg A. Kirillov, James E. Maslar, D. E. Ioannou, Qiliang Li
Topological insulators are unique electronic materials with insulating interiors but robust metallic surfaces. Device applications exploiting their remarkable properties, such as surface conduction of helical Dirac electrons, have so far been hampered by

In Situ Gas Phase Diagnostics for Titanium Nitride Atomic Layer Deposition

October 14, 2011
Author(s)
James E. Maslar, William A. Kimes, Brent A. Sperling
This report describes the performance of a technique for the simultaneous, rapid measurement of major gas phase species present during titanium nitride thermal atomic layer deposition involving tetrakis(dimethylamido) titanium (TDMAT) and ammonia. In this

In Situ Gas Phase Measurements During Metal Alkylamide Atomic Layer Deposition

July 12, 2011
Author(s)
James E. Maslar, William A. Kimes, Brent A. Sperling
Metal alkylamide compounds, such as tetrakis(ethylmethylamido) hafnium (TEMAH), represent a technologically important class of metalorganic precursors for the deposition of metal oxides and metal nitrides via atomic layer deposition (ALD) or chemical vapor

Thin-Film Resistance Thermometers on Silicon Wafers

March 3, 2009
Author(s)
Kenneth G. Kreider, Dean C. Ripple, William A. Kimes
Thermal processing of semiconductors is a critical, capital intensive step in achieving high yields and profitability in the manufacturing of electronic chips such as ASICs and DRAMs. Many techniques have been developed to control the temperature of the

In Situ Gas Phase Diagnostics for Hafnium Oxide Atomic Layer Deposition

January 1, 2008
Author(s)
James E. Maslar, Wilbur S. Hurst, Donald R. Burgess Jr., William A. Kimes, Nhan V. Nguyen, Elizabeth F. Moore, Joseph T. Hodges
Atomic layer deposition (ALD) is an important method for depositing the nanometer-scale, conformal high  dielectric layers required for many nanoelectronics applications. In situ monitoring of ALD processes has the potential to yield insights that will