September 1, 2017
Author(s)
Sean M. Oliver, Ryan Beams, Sergiy Krylyuk, Arunima Singh, Irina Kalish, Alina Bruma, Francesca Tavazza, Iris Stone, Stephan J. Stranick, Albert Davydov, Patrick M. Vora
The structural polymorphism in transition metal dichalcogenides (TMDs) provides exciting opportunities for developing advanced electronics. For example, MoTe2 crystallizes in the 2H semiconducting phase at ambient temperature and pressure, but transitions