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Search Publications by: Pradeep Namboodiri (Fed)

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Displaying 1 - 25 of 56

Enhanced zero-phonon line emission from an ensemble of W centers in circular and bowtie Bragg grating cavities

November 19, 2024
Author(s)
Vijin Kizhake Veetil, Junyeob Song, Pradeep Namboodiri, Nikki Ebadollahi, Ashish Chanana, Aaron Katzenmeyer, Christian Pederson, Joshua Pomeroy, Jeff Chiles, Jeff Shainline, Kartik Srinivasan, Marcelo Davanco, Matthew Pelton
Color centers in silicon have recently gained considerable attention as a single-photon source [1,2] and as a spin qubit-photon interface [3] for quantum information applications. However, one of the major bottlenecks is their low overall brightness due to

Optical Studies of Silicon Color Centers and CC-LEDs for Consideration as Telecom Quantum Light Sources

October 29, 2024
Author(s)
Nikki Ebadollahi, Pradeep Namboodiri, Vijin Kizhake Veetil, Marcelo Davanco, Kartik Srinivasan, Aaron Katzenmeyer, Matthew Pelton, Joshua Pomeroy
We synthesized and studied color centers on silicon-on-insulator wafers with photoluminescence mapping and spectroscopy, and fabricated silicon W- and G- color center LEDs towards electrically-pumped single photon sources.

Design, modeling, and fabrication of high frequency Oersted lines for electron spin manipulation in silicon based quantum devices

October 25, 2024
Author(s)
Pradeep Namboodiri, Mark-yves Gaunin, Alessandro Restelli, Ranjit Kashid, Xiqiao Wang, Fan Fei, Brian Courts, FNU Utsav, Vijith Kamalon Pulikodan, Jonathan Wyrick, Richard M. Silver
Coherent manipulation of electron spins is one of the central problems of silicon-based quantum computing efforts. Electron spin resonance (ESR) lines, or Oersted lines, allow high frequency RF pulses to induce an electromagnetic field that drives Rabi

DC to GHz measurements of a near-ideal 2D material: P+ monolayers

March 8, 2024
Author(s)
Neil M. Zimmerman, Antonio Levy, Pradeep Namboodiri, Joshua M. Pomeroy, Xiqiao Wang, Joseph Fox, Richard M. Silver
P+ monolayers in Si are of great scientific and technological interest, both intrinsically as a material in the "ideal vacuum" of crystalline Si, and because they are showing great promise as qubits of electron and nuclear spin. The GHz complex

Multi-scale alignment to buried atom-scale devices using Kelvin probe force microscopy

February 24, 2024
Author(s)
Pradeep Namboodiri, Jonathan Wyrick, Gheorghe Stan, Xiqiao Wang, Fan Fei, Ranjit Kashid, Scott Schmucker, Richard Kasica, Bryan Barnes, Michael Stewart, Richard M. Silver
Fabrication of quantum devices by atomic scale patterning with a Scanning Tunneling Microscope (STM) has led to the development of single/few atom transistors, few-donor/quantum dot devices for spin manipulation and arrayed few-donor devices for analog

Experimental realization of an extended Fermi-Hubbard model using a 2D lattice of dopant-based quantum dots

November 11, 2022
Author(s)
Richard M. Silver, Jonathan Wyrick, Xiqiao Wang, Ranjit Kashid, Garnett W. Bryant, Albert Rigosi, Pradeep Namboodiri, Ehsan Khatami
The Hubbard model is one of the primary models for understanding the essential many-body physics in condensed matter systems such as Mott insulators and cuprate high-Tc superconductors. Due to the long-range Coulomb interactions, accessible low

Enhanced Atomic Precision Fabrication by Adsorption of Phosphine into Engineered Dangling Bonds on H-Si Using STM and DFT

November 1, 2022
Author(s)
Jonathan Wyrick, Xiqiao Wang, Pradeep Namboodiri, Ranjit Kashid, Fan Fei, Joseph Fox, Richard M. Silver
Doping of Si using the scanning probe technique of hydrogen depassivation lithography has been shown to enable placing and positioning small numbers of P atoms with nanometer accuracy. Several groups have now used this capability to build devices that

Electron-electron interactions in low-dimensional Si:P delta layers

June 15, 2020
Author(s)
Joseph Hagmann, Xiqiao Wang, Ranjit Kashid, Pradeep Namboodiri, Jonathan Wyrick, Scott W. Schmucker, Michael Stewart, Richard M. Silver, Curt A. Richter
Key to producing quantum computing devices based on the atomistic placement of dopants in silicon by scanning tunneling microscope (STM) lithography is the formation of embedded highly doped Si:P delta layers (δ-layers). This study investigates the

Atomic-scale control of tunneling in donor-based devices

May 11, 2020
Author(s)
Xiqiao Wang, Jonathan E. Wyrick, Ranjit V. Kashid, Pradeep N. Namboodiri, Scott W. Schmucker, Andrew Murphy, Michael D. Stewart, Richard M. Silver
Atomically precise donor-based quantum devices are a promising candidate for scalable solid- state quantum computing. Atomically precise design and implementation of the tunnel coupling in these devices is essential to realize gate-tunable exchange

Low-resistance, high-yield electrical contacts to atom scale Si:P devices using palladium silicide

March 29, 2019
Author(s)
Scott W. Schmucker, Pradeep Namboodiri, Ranjit Kashid, Xiqiao Wang, Binhui Hu, Jonathan Wyrick, Alline Myers, Joshua D. Schumacher, Richard M. Silver, Michael Stewart
Scanning tunneling microscopy (STM) enables the fabrication of 2-D delta-doped structures in Si with atomistic precision, with applications from tunnel field effect transistors to qubits. The combination of a very small contact area and the restrictive

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers

January 26, 2018
Author(s)
Xiqiao Wang, Joseph A. Hagmann, Pradeep N. Namboodiri, Jonathan E. Wyrick, Kai Li, Roy E. Murray, Frederick Meisenkothen, Alline F. Myers, Michael D. Stewart, Richard M. Silver
Doped semiconductor structures with ultra-sharp dopant confinement, minimal lattice defects, and high carrier concentrations are essential attributes in the development of both ultra- scaled conventional semiconductor devices and emerging all-silicon

Weak localization thickness measurements of embedded phosphorus delta layers in silicon produced by PH3 dosing

January 23, 2018
Author(s)
Joseph A. Hagmann, Xiqiao Wang, Pradeep N. Namboodiri, Jonathan E. Wyrick, Roy E. Murray, Michael D. Stewart, Richard M. Silver
The key building blocks for devices based on the deterministic placement of dopants in silicon are the formation of phosphorus dopant monolayers and the overgrowth of high quality crystalline Si. Lithographically defined dopant delta-layers can be formed