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Search Publications by: Sergiy Krylyuk (Fed)

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Displaying 26 - 50 of 153

Rapid Phase Transition of Al2O3 Encapsulated MoTe2 via Thermal Annealing

July 19, 2022
Author(s)
Rohan Sengupta, Saroj Dangi, Sergiy Krylyuk, Albert Davydov, Spyridon Pavlidis
MoTe2 has gained a lot of attention recently as a potential phase change material candidate for low-power nonvolatile switches and high-density memory applications, due to the smallest predicted energy offset between its semiconducting 2H and semimetallic

Self-Driven Highly Responsive PN Junction InSe Heterostructure Near-Infrared Light Detector

June 30, 2022
Author(s)
Chandraman Patil, Chaobo Dong, Hao Wang, Hamed Dalir, Sergiy Krylyuk, Huairuo Zhang, Albert Davydov, Volker Sorger
Photodetectors converting light signals into detectable photocurrents are ubiquitously in use today. To improve the compactness and performance of next-generation devices and systems, low dimensional materials provide rich physics to engineering the light

Powder X-ray structural analysis and band gap measurements for (CaxSr2-x)MnWO6 (x = 0.25, 0.5, 0.75, 1.5, 1.75).

June 1, 2022
Author(s)
Winnie Wong-Ng, YuQi Yang, Yu-Cheng Lan, GuangYao Liu, Amrit Kafle, Weifang Liu, Jie Hou, Donald Windover, Qingzhen Huang, Sergiy Krylyuk, James A. Kaduk
The structure, powder diffraction patterns and band gap measurements of a series of manganese- and tungsten-containing alkaline-earth double perovskites (CaxSr2-x)MnWO6 (x=0.25, 0.5, 0.75, 1.5, 1.75) have been investigated. Powder X-ray diffraction

Electrochemically Assaying Dopamine with p-Doped Silicon Nanowires

March 14, 2022
Author(s)
Nawaraj Karki, Albert Davydov, Sergiy Krylyuk, Charles Chusuei
Neuroblastoma, a pediatric cancer, is characterized by high urinary excretion of dopamine (DA). Silicon nanowires (SiNWs), which are nontoxic and known to resist surface fouling in biological samples, were investigated for practical use as working

Spatially-resolved bandgap and dielectric function in two-dimensional materials from Electron Energy Loss Spectroscopy

February 15, 2022
Author(s)
Abel Brokkelkamp, Jaco ter Hoeve, Isabel Postmes, Sabrya van Heijst, Luigi Maduro, Albert Davydov, Sergiy Krylyuk, Juan Rojo, Sonia Conesa Boj
The electronic properties of two-dimensional (2D) materials depend sensitively on the underlying atomic arrangement down to the monolayer level. Here we present a novel strategy for the determination of the band gap and complex dielectric function in 2D

Thickness-dependent transport properties and photoresponse in MoSe2 field-effect transistors

February 4, 2022
Author(s)
Shiqi Guo, Sergiy Krylyuk, Hsin Y. Lee, Ratan K. Debnath, Albert Davydov, Mona E. Zaghloul
Transition metal dichalcogenides have been studied extensively due to their unique properties in low-dimensional limits. In this work, we have examined the effect of MoSe2 layer thickness on its electrical properties in a field effect transistor (FET)

Charge Density Wave Activated Excitons in MoSe2

January 5, 2022
Author(s)
Jaydeep Joshi, Benedikt Scharf, Igor Mazin, Sergiy Krylyuk, Daniel Campbell, Albert Davydov, Johnpierre Paglione, Igor Zutic, Patrick Vora
Layered materials enable the assembly of a new class of heterostructures where lattice-matching is no longer a requirement. Interfaces in these heterostructures therefore become a fertile ground for new physics as dissimilar phenomena can be coupled via

Low barrier height in a ZnO nanorods/NbSe2 heterostructure prepared by van der Waals epitaxy

September 9, 2021
Author(s)
Yeonhoo Kim, Roxanne Tutchton, Ren Liu, Sergiy Krylyuk, Jian-Xin Zhu, Albert Davydov, Young Joon Hong, Jinkyoung Yoo
Two-dimensional (2D) materials as contacts for semiconductor devices have attracted great attention due to minimizing Fermi level pinning. Schottky–Mott physics has been widely employed to design 2D material-based electrodes and to elucidate their contact

Mobility Extraction in 2D Transition Metal Dichalcogenide Devices - Avoiding Contact Resistance Implicated Overestimation

June 10, 2021
Author(s)
Chin-Sheng Pang, Ruiping Zhou, Xiangkai Liu, Peng Wu, Terry Y. Hung, Shiqi Guo, Mona E. Zaghloul, Sergiy Krylyuk, Albert Davydov, Joerg Appenzeller, Zhihong Chen
Schottky barrier (SB) transistors operate distinctly different from conventional metal-oxide semiconductor field-effect transistors (MOSFETs), in a unique way that the gate impacts the carrier injection from the metal source/drain contacts into the channel

Substrate-mediated hyperbolic phonon polaritons in MoO3

February 15, 2021
Author(s)
Jeffrey Schwartz, Son T. Le, Sergiy Krylyuk, Curt A. Richter, Albert Davydov, Andrea Centrone
Hyperbolic phonon polaritons (HPhPs) are hybrid excitations of light and coherent charge oscillations that exist in strongly optically anisotropic, two-dimensional materials (e.g., MoO3). These polaritons propagate through the material's volume with long