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Search Publications by: David Gundlach (Fed)

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Displaying 1 - 25 of 180

Magnetic Field Sensor Based on a OLED/Organic Photodetector Stack

August 1, 2023
Author(s)
Sebastian Engmann, Emily Bittle, David Gundlach
In this study a novel, all organic magnetic field sensor is presented based on an organic light emitting diode (OLED) and organic photodetector (OPD) with a maximum field sensitivity comparable to commercial Hall-sensors. The sensor function is driven by

Strategic Opportunities for U.S. Semiconductor Manufacturing

August 1, 2022
Author(s)
Anita Balachandra, David Gundlach, Paul D. Hale, Kevin K. Jurrens, R Joseph Kline, Tim McBride, Ndubuisi George Orji, Sanjay (Jay) Rekhi, Sivaraj Shyam-Sunder, David G. Seiler
Semiconductors are critical to our Nation's economic growth, national security, and public health and safety. Revolutionary advances in microelectronics continue to drive innovations in communications, information technology, health care, military systems

The role of orientation in the MEL response of OLEDs

July 13, 2021
Author(s)
Sebastian Engmann, Emily Bittle, Lee J. Richter, Rawad Hallani, John Anthony, David J. Gundlach
Magneto electroluminescence (MEL) is emerging as a powerful tool for the study of spin dynamics in emitting devices. The shape of the MEL response is typically used to draw qualitative inference on the dominant process (singlet fission or triplet fusion)

High-density polyethylene - an inert additive with stabilizing effects on organic field-effect transistors

September 11, 2020
Author(s)
Alberto Scaccabarozzi, James Basham, Liyang Yu, Paul Westcott, Weimin Zhang, Aram Amassian, Iain McCulloch, Mario Caironi, David J. Gundlach, Natalie Stingelin
Organic electronics technologies have attracted considerable interest over the last decades and have become promising alternatives to conventional, inorganic platforms for specific applications. To fully exploit the touted potential of plastic electronics

Contact resistance in organic field-effect transistors: conquering the barrier

May 15, 2020
Author(s)
Matthew Waldrip, Oana Jurchescu, David J. Gundlach, Emily Bittle
Organic semiconductors have sparked significant interest due to their inherent properties as flexible, solution processible, and chemically tunable electronic materials. In the last 10 years, the improvements in charge carrier mobility in small molecule

Correlating anisotropic mobility and intermolecular phonons in organic semiconductors to investigate transient localization

March 19, 2019
Author(s)
Emily G. Bittle, Adam J. Biacchi, Lisa A. Fredin, Andrew A. Herzing, Thomas C. Allison, Angela R. Hight Walker, David J. Gundlach
Charge transport in organic semiconductors is governed by a mix of polaron hopping and band- like transport mechanisms. The energy of polaron hopping and formation are similar in magnitude to the energies of inter- and intra- molecular modes, which points

Higher Order Effects in Organic LEDs with Sub-bandgap Turn-on

January 16, 2019
Author(s)
Sebastian Engmann, Adam J. Barito, Emily Bittle, Chris Giebink, Lee J. Richter, David J. Gundlach
Spin-dependent nonlinear processes in organic materials such as singlet-fission and triplet- triplet annihilation could increase the performance for photovoltaics, detectors, and light emitting diodes. Rubrene/C60 light emitting diodes exhibit a distinct

Electrical Detection of Singlet Fission in Single Crystal Tetracene Transistors

January 4, 2019
Author(s)
Hyuk-Jae Jang, Emily Bittle, Qin Zhang, Adam Biacchi, Curt A. Richter, David J. Gundlach
Here, we present the electrical detection of singlet fission in tetracene by using a field- effect transistor (FET). Singlet fission is a photo-induced spin-dependent process yielding two triplet excitons from the absorption of a single photon. , In this

Band offset and electron affinity of MBE-grown SnSe2

January 25, 2018
Author(s)
Qin Zhang, Mingda Li, Edward Lochocki, Suresh Vishwanath, Xinyu Liu, Rusen Yan, Huai-Hsun Lien, Malgorzata Dobrowolska, Jacek Furdyna, Kyle M. Shen, Guangjun Cheng, Angela R. Hight Walker, David J. Gundlach, Huili G. Xing, Nhan V. Nguyen
SnSe2 is currently considered a potential 2D material that can form a near-broken gap heterojunction in a tunnel field-effect transistor (TFET) due to its conceivable large electron affinity, which is experimentally confirmed in this letter. With the

Calibration and impact of bulk trap-assisted tunneling and Shockley-Read-Hall currents in InGaAs tunnel-FETs

September 1, 2017
Author(s)
Quentin Smets, Anne S. Verhulst, Eddy Simoen, David J. Gundlach, Curt A. Richter, Nadine Collaert, Marc Heyns
The tunnel-FET (TFET) is a promising candidate for future low-power logic applications because it enables a sub-60 mV/dec subthreshold swing. However, most experimental TFETs are plagued by unwanted trap-assisted tunneling (TAT) and Shockley-Read-Hall (SRH