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Search Publications by: David Gundlach (Fed)

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Displaying 51 - 75 of 180

Electron and Hole Photoemission Detection for Band Offset Determination of Tunnel Field-Effect Transistor Heterojunctions

November 24, 2014
Author(s)
Wei Li, Qin Zhang, R. Bijesh, Oleg A. Kirillov, Yiran Liang, Igor Levin, Lianmao Peng, Xuelei Liang, S. Datta, David J. Gundlach, Nhan V. Nguyen
The electrical performance of a tunnel field-effect transistor depends critically on the band offset at their semiconductor heterojunction interface. Historically, it has been difficult to experimentally determine how the electronic bands align at the

Interface Engineering to Control Magnetic Field Effects of Organic-Based Devices by Using a Molecular Self-Assembled Monolayer

June 26, 2014
Author(s)
Hyuk-Jae Jang, Sujitra J. Pookpanratana, Alyssa N. Brigeman, Regis J. Kline, James I. Basham, David J. Gundlach, Christina A. Hacker, Oleg A. Kirillov, Oana Jurchescu, Curt A. Richter
Organic semiconductors hold immense promise for the development of a wide range of innovative devices with their excellent electronic and manufacturing characteristics. Of particular interest are non-magnetic organic semiconductors that show unusual

Morphological origin of charge transport anisotropy in aligned polythiophene thin films

June 11, 2014
Author(s)
Brendan T. O'Connor, Obadiah G. Reid, Xinran Zhang, Regis J. Kline, Lee J. Richter, David J. Gundlach, Dean DeLongchamp, Michael F. Toney, Nikos Kopidakis, Garry Rumbles
The morphological origin of anisotropic charge transport in uniaxially strain aligned poly(3-hexylthiophene) (P3HT) films is investigated. The macroscale field effect mobility anisotropy is measured in an organic thin film transistor (OTFT) configuration

Predicting the J-V Curve in Organic Photovoltaics Using Impedance Spectroscopy

June 2, 2014
Author(s)
James I. Basham, Thomas N. Jackson, David J. Gundlach
We employ impedance spectroscopy as a method to predict the current-voltage curve in organic photovoltaics. This technique allows the quantification of the recombination rate, series resistance, carrier density and lifetime very close to normal operating

Highly reproducible and reliable metal/graphene contact by UV-Ozone treatment

March 17, 2014
Author(s)
Wei Li, Christina A. Hacker, Guangjun Cheng, Angela R. Hight Walker, Curt A. Richter, David J. Gundlach, Yiran Liang, boyuan Tian, Xuelei Liang, Lianmao Peng
Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy (XPS) and Raman measurement, to be an

Modulated photocurrent spectroscopy of CdTe/CdS solar cells-equivalent circuit analysis

May 20, 2013
Author(s)
Behrang H. Hamadani, John F. Roller, Kounavis Panagiotis, Nikolai B. Zhitenev, David J. Gundlach
We have used the technique of photocurrent modulated spectroscopy to investigate the dynamic response of charge carrier transport in thin film CdTe/CdS solar cells as a function of light bias and temperature over a broad excitation frequency range. The

Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide

March 27, 2013
Author(s)
Rusen Yan, Qin Zhang, Oleg A. Kirillov, Wei Li, James I. Basham, Alexander G. Boosalis, Xuelei X. Liang, Debdeep Jena, Curt A. Richter, Alan C. Seabaugh, David J. Gundlach, Huili G. Xing, Nhan V. Nguyen
The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the

Band Offset Determination of Atomic-Layer-Deposited Al2O3 and HfO2 on InP by Internal Photoemission and Spectroscopic Ellipsometry

January 9, 2013
Author(s)
Kun Xu, Oleg A. Kirillov, David J. Gundlach, Nhan V. Nguyen, Pei D. Ye, Min Xu, Lin Dong, Hong Sio
Band offsets at the interfaces of n- and p-type InP ((100) and (111)A) and atomic-layer-deposited (ALD) Al2O3 were measured with internal photoemission and spectroscopic ellipsometry. Similarly, the band offsets at the interface of semi-insulating InP (100

A Unique Photoemission Method to Measure Semiconductor Heterojunction Band Offsets

January 2, 2013
Author(s)
Qin Zhang, Rui Li, Rusen Yan, Thomas Kosel, Grace Xing, Alan Seabaugh, Kun Xu, Oleg A. Kirillov, David J. Gundlach, Curt A. Richter, Nhan V. Nguyen
We report a unique way to measure the energy band offset of a heterojunction by exploiting the light absorption profile in the heterojunction under visible-ultraviolet internal photoemission. This method was used to successfully determine the band

Direct Measurement of Intrinsic Dirac Point and Fermi level at Graphene/Oxide interface and Its Band Alignment by Cavity Enhanced Internal Photoemission

December 17, 2012
Author(s)
Kun Xu, Caifu Zeng, Qin Zhang, Rusen Yan, Peide Ye, Kang Wang, Alan C. Seabaugh, Huili G. Xing, John S. Suehle, Curt A. Richter, David J. Gundlach, Nhan V. Nguyen
We report the first direct measurement of the Dirac point, the Fermi level, and the work function of graphene by performing internal photoemission measurements on a graphene/SiO2/Si structure with a unique optical-cavity enhanced test structure. A complete