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Search Publications by: David Gundlach (Fed)

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Displaying 126 - 150 of 180

Flexible Memristors

December 3, 2009
Author(s)
Nadine E. Gergel-Hackett, Laurie A. Stephey, Barbara Dunlap, Behrang H. Hamadani, David J. Gundlach, Curt A. Richter

Flexible Memristors

December 3, 2009
Author(s)
Nadine Gergel-Hackett, Laurie Stephey, Barbara Dunlap, Behrang Hamadani, David J. Gundlach, Curt A. Richter

Electrical Characterization of Soluble Anthradithiophene Derivatives

November 19, 2009
Author(s)
Brad Conrad, Calvin Chan, Marsha A. Loth, John E. Anthony, David J. Gundlach
Organic semiconductors remain an active subject for device physics and material science because of their varied electrical properties and potential for low-cost, high-throughput roll-to-roll processing. Several high-mobility oligomers, such as pentacene

Effects of Polymorphism on Charge Transport in Organic Semiconductors

August 3, 2009
Author(s)
Oana Jurchescu, M. Devin, Sankar Subramanian, Sean R. Parkin, Brandon Vogel, John E. Anthony, Thomas Jackson, David J. Gundlach
The increasing interest in fluorinated 5,11-bis(triethylsilylethynyl)anthradithiophene (diF TES ADT) is motivated by the demonstrated high performance field-effect transistors and circuits based on this material, complemented by reduced complexity

Substrate-dependent interface composition and charge transport in films for organic photovoltaics

June 9, 2009
Author(s)
David Germack, Calvin Chan, Behrang Hamadani, Lee J. Richter, Daniel A. Fischer, David J. Gundlach, Dean DeLongchamp
The buried interface composition of polymer-fullerene blends is found by near edge X ray absorption fine structure (NEXAFS) spectroscopy to depend on the surface energy of the substrate upon which they are cast. The interface composition determines the

Flexible Solution-Processed Memristors

June 3, 2009
Author(s)
Nadine E. Gergel-Hackett, Behrang H. Hamadani, B Dunlap, John S. Suehle, Curt A. Richter, Christina A. Hacker, David J. Gundlach
We have fabricated physically flexible nonvolatile memory devices using inexpensive, room-temperature, solution processing. The behavior of these devices is consistent with that of a memristor device, the missing fourth circuit element theoretically