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Search Publications by: Brian Kirby (Fed)

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Displaying 76 - 100 of 184

Highly Contrasting Static Charging and Bias Stress Effects in Pentacene Transistors with Polystyrene Heterostructures Incorporating Oxidizable N,N'-Bis(4-Methoxyphenyl)aniline Side Chains as Gate Dielectrics

August 1, 2018
Author(s)
Qingyang Zhang, Tejaswini S. Kale, Evan Plunkett, Wei Shi, Brian Kirby, Daniel H. Reich, Howard E. Katz
Charge trapping and storage in polymer dielectrics can be harnessed for the control of semiconductor device behavior, including organic transistors. For example, gate insulators chosen for organic transistors have an important effect on both bias stress

Exchange-Biasing Topological Charges by Antiferromagnetism

July 17, 2018
Author(s)
Qing Lin He, Gen Yin, Alexander Grutter, Lei Pan, Xiaoyu Che, Guoqiang Yu, Dustin A. Gilbert, Steven M. Disseler, Yizhou Liu, Padraic Shafer, Bin Zhang, Yingying Wu, Brian Kirby, Elke Arenholz, Roger K. Lake, Xiaodong Han, Kang L. Wang, Xiaodong Han, Kang L. Wang
'Geometric' or 'topological' Hall effect is induced by the emergent gauge field experienced by the carriers adiabatically passing through chiral spin textures. This effect is an indication of non-trivial spin textures, such as magnetic skyrmions. Here we

Quasistatic Antiferromagnetism in the Quantum Wells of SmTiO 3 /SrTiO 3 Heterostructures

February 20, 2018
Author(s)
Ryan F. Need, Patrick B. Marshall, Eric Kenney, Andreas Suter, Thomas Prokscha, Zaher Salman, Brian Kirby, Susanne Stemmer, Michael J. Graf, Stephen D. Wilson
The magnetic properties of high-density SrTiO 3 quantum wells embedded within the antiferromagnetic Mott insulator SmTiO 3 are explored via muon spin relaxation and polarized neutron reflectometry measurements. The one electron per wel acquired by the

Ion-Gel-Gating-Induced Oxygen Vacancy Formation in Epitaxial La 0.5Sr d0.5^CoO^d3-d Films from in operando X-ray and Neutron Scattering

December 19, 2017
Author(s)
Jeff Walter, Guichuan Yu, Biqiong Yu, Alexander Grutter, Brian Kirby, Julie Borchers, Zhan Zhang, Hua Zhou, Turan Birol, Martin Greven, Chris Leighton
Ionic-liquid/gel-based transistors have emerged as an ideal means to accumulate high charge carrier densities at the surfaces of materials such as oxides, enabling control over electronic phase transitions. Substantial gaps remain in the understanding of

Compensated Ferrimagnetism in the Zero-Moment Heusler Alloy Mn 3 Al

June 30, 2017
Author(s)
Michelle Elizabeth Jamer, Yung Jui Wang, Gregory M. Stephen, Ian J. McDonald, Alexander J Grutter, George E. Sterbinsky, Dario A. Arena, Julie A. Borchers, Brian J Kirby, Laura H. Lewis, Bernardo Barbiellini, Arun Bansil, Don Heiman
While antiferromagnets have been proposed as components to limit stray magnetic fields in spintronics devices, their inability to be spin polarized inhibits their use. Compensated ferrimagnets are a unique solution to this dilemma since they have zero net

Magnetic Properties of Epitaxial CoCr Films with Depth-Dependent Exchange-Coupling Profiles

April 27, 2017
Author(s)
Lorenzo Fallarino, Brian Kirby, Matteo Pancaldi, Patricia Riego, Andrew L. Balk, Casey W. Miller, Paolo Vavassori, A. Berger
We present a study of the compositional and temperature dependent magnetic properties of epitaxial CoCr thin films whose composition has a bathtub-like depth profile Co/Co 1→1- x cCr 0→x c/Co 1-x cCr xc /Co 1-x c→1Cr x c→0^/Co with the highest Cr

Lateral Magnetically Modulated Multilayers by Combining Ion Implantation and Lithography

March 1, 2017
Author(s)
Enric Menendez, Hiwa Modarresi, Claire Petermann, Josep Nogues, Neus Domingo, Haoliang Liu, Brian Kirby, Amir Syed Mohd, Zahir Salhi, Earl Babcock, Stefan Mattauch, Chris Van Haesendonck, Andre Vantomme, Kristiaan Temst
The combination of lithography and ion implantation is demonstrated to be a suitable method to prepare lateral multilayers. A laterally, compositionally and magnetically, modulated microscale patter consisting of alternating C (1.6υm-wide) and Co-CoO (2

Tailoring Exchange Couplings in Magnetic Topological Insulator/Antiferromagnet Heterostructures

January 1, 2017
Author(s)
Qing Lin He, Xufeng Kou, Alexander Grutter, Gen Yin, Lei Pan, Xiaoyu Che, Yuxiang Liu, Tianxiao Nie, Bin Zhang, Steven M.T. Disseler, Brian Kirby, William D. Ratcliff, Qiming Shao, Koichi Murata, Xiaodan Zhu, Guoqiang Yu, Yabin Fan, Mohammad Montazeri, Xiaodong Han, Julie Borchers, Kang L. Wang
Magnetic topological insulators such as Cr-doped (Bi,Sb) 2Te 3 provide a platform for the realization of versatile time-reversal symmetry-breaking physics. By constructing heterostructures with the unique Neel order in an antiferromagnetic CrSb and the

Oscillatory Non-Collinear Magnetism Induced by Interfacial Charge Transfer in Metallic Oxide Superlattices

November 22, 2016
Author(s)
Jason D. Hoffman, Brian Kirby, Jihwan Kwon, Gilberto Fabbris, John W. Freeland, Ivar Martin, Olle G. Heinonen, Paul Steadman, Hua Zhou, Christian M. Schleputz, Suzanne G. E. te Velthuis, Jian-Min Zuo, Anand Bhattacharya
Interfaces between correlated complex oxides are promising avenues to realize new forms of magnetism that arise as a result of charge transfer, proximity effects and locally broken symmetries. We report upon the discovery of a non-collinear magnetic

Concurrent Magnetic and Structural Reconstructions at the Interface of (111)-Oriented La 0.07 Sr 0.3 MnO 3 /LaFeO 3

November 21, 2016
Author(s)
I. Hallsteinsen, M. Moreau, Alexander Grutter, M. Nord, P.-E. Vullum, Dustin A. Gilbert, T. Bolstad, J. K. Grepstad, R. Holmestad, S. M. Selbach, A. T. N'Diaye, Brian Kirby, E. Arenholz, T. Tybell
We observe an induced switchable magnetic moment of 1.6 ± 0.40 υ B/Fe in the nominally antiferromagnetic LaFeOd3^/La 0.7Sr 0.3MnO 3/SrTiO 3(111). The magnetic reconstruction is driven by a mismatch of oxygen octahedra rotations resulting in an atomic