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Search Publications by: Michael Stewart (Fed)

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Displaying 26 - 42 of 42

Quantifying Atom-scale Dopant Movement and Electrical Activation in Si:P Monolayers

January 26, 2018
Author(s)
Xiqiao Wang, Joseph A. Hagmann, Pradeep N. Namboodiri, Jonathan E. Wyrick, Kai Li, Roy E. Murray, Frederick Meisenkothen, Alline F. Myers, Michael D. Stewart, Richard M. Silver
Doped semiconductor structures with ultra-sharp dopant confinement, minimal lattice defects, and high carrier concentrations are essential attributes in the development of both ultra- scaled conventional semiconductor devices and emerging all-silicon

Weak localization thickness measurements of embedded phosphorus delta layers in silicon produced by PH3 dosing

January 23, 2018
Author(s)
Joseph A. Hagmann, Xiqiao Wang, Pradeep N. Namboodiri, Jonathan E. Wyrick, Roy E. Murray, Michael D. Stewart, Richard M. Silver
The key building blocks for devices based on the deterministic placement of dopants in silicon are the formation of phosphorus dopant monolayers and the overgrowth of high quality crystalline Si. Lithographically defined dopant delta-layers can be formed

AC Signal Characterization for Optimization of a CMOS Single Electron Pump

January 8, 2018
Author(s)
Roy E. Murray, Justin K. Perron, Michael D. Stewart, Neil M. Zimmerman
Pumping single electrons at a set rate is being widely pursued as an electrical current standard. Much work has been done on pumping using a single AC signal, but using multiple coordinated AC signals may help lower error rates. Whether pumping with one or

Valley blockade in a silicon double quantum dot

November 13, 2017
Author(s)
Justin K. Perron, Michael Gullans, Jacob Taylor, Michael Stewart, Neil M. Zimmerman
Electrical transport in double quantum dots (DQD) is useful for illuminating many interesting aspects of the carrier states in quantum dots. Here we show data comparing bias triangles (i.e., regions of allowed current in DQDs) at positive and negative bias

Towards single atom devices for quantum information and metrology: weak localization in embedded phosphorus delta layers in silicon

June 29, 2017
Author(s)
Joseph A. Hagmann, Xiqiao Wang, Pradeep N. Namboodiri, Jonathan E. Wyrick, Roy E. Murray, Michael D. Stewart, Richard M. Silver, Curt A. Richter
The key building block for devices based on the deterministic placement of dopants in silicon is the formation of phosphorus dopant monolayers and the overgrowth of high quality crystalline Si. Lithographically defined dopant delta-layers can be formed

Stability of Single Electron Devices: Charge Offset Drift

June 29, 2016
Author(s)
Michael D. Stewart, Neil M. Zimmerman
Abstract: Single electron devices (SEDs) afford the opportunity to isolate and manipulate individual electrons. This ability imbues SEDs with potential applications in a wide array of areas from metrology (current and capacitance) to quantum information

A New Regime of Pauli-Spin Blockade

April 7, 2016
Author(s)
Justin K. Perron, Michael D. Stewart, Neil M. Zimmerman
Pauli-spin blockade is a phenomenon that allows for a type of spin to charge conversion often used to probe fundamental physics such as spin relaxation and singlet-triplet coupling. In this paper we theoretically explore Pauli-spin blockade as a function