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Search Publications by: Pragya Shrestha (Fed)

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Displaying 76 - 92 of 92

Accurate RRAM Transient Currents during Forming

April 30, 2014
Author(s)
Pragya R. Shrestha, David M. Nminibapiel, Jason P. Campbell, Jihong Kim, Canute I. Vaz, Kin P. Cheung, Helmut Baumgart
Current overshoot during forming has been shown to be a serious issue. Recently the current overshoot duration has been shown to be an important factor impacting device performance. Short duration overshoot in the range of ns yield better performance. But

Dependence of the Filament Resistance on the Duration of Current Overshoot

March 3, 2014
Author(s)
Pragya R. Shrestha, David M. Nminibapiel, Jason P. Campbell, Kin P. Cheung, Helmut Baumgart, Shweta Deora, G. Bersuker
The characteristics of a conductive filament in HfO2 RRAM is shown to be dependent on the duration of the current compliance overshoot, which may occur during the filament formation process. In addition to the overshoot amplitude, the filament resistance

Fast-Capacitance for Advanced Device Characterization

March 3, 2014
Author(s)
Pragya R. Shrestha, Kin P. Cheung, Jason T. Ryan, Jason P. Campbell, Helmut Baumgart
Fast-CV measurements are frequently being used to study transient phenomena associated with advanced devices. In this study, we show that many artifacts plague this measurement and then provide a proper method to legitimize fast-CV measurements as

Unexpected effect of thermal storage observed on SiC power DMOSFET

September 29, 2013
Author(s)
Zakariae Chbili, Pragya R. Shrestha, Jason P. Campbell, John S. Suehle, Kin P. Cheung, D. E. Ioannou
In this paper we report an unexpected improvement in the SiC DMOSFET transistor characteristics after a long temperature treatment at 150 C. The evolution of the device characteristics during a TDDB stress is compared to that after an elevated temperature

Current Compliance Circuit to Improve Variation in ON State Characteristics and to Minimize RESET Current

October 7, 2012
Author(s)
Pragya R. Shrestha, Adaku Ochia, Jason P. Campbell, Canute I. Vaz, Jihong Kim, Kin P. Cheung, Helmut Baumgart, Gary Harris
The wide distribution of ON and OFF values and high SET current in resistive memory is attributed to the high current overshoot during the SET process. In this paper we show a circuit which is capable of precisely limiting the current during SET process

High Speed Endurance and Switching Measurements for Memristive Switches

March 6, 2012
Author(s)
Pragya R. Shrestha, Adaku Ochia, Kin P. Cheung, Jason P. Campbell, Helmut Baumgart, Gary Harris
Accurate capture of the Set/Reset characteristics is a necessary but challenging task for the development of memristive switches. Here we describe and demonstrate a technique capable of meeting this challenge. This technique can measure the transient

High Speed Switching Characteristics of Pt/Ta2O5/Cu Memristive Switch

October 8, 2011
Author(s)
Pragya R. Shrestha, Adaku Ochia, Kin P. Cheung, Jason P. Campbell, Helmut Baumgart, Gary Harris
Accurate measurements of the transient details of switching a memristive switch are crucial to the elucidation of the switching mechanism. Such high-speed measurements are often plagued by artifacts. Here we describe a measurement technique capable of