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Search Publications by: Richard Mirin (Fed)

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Displaying 201 - 217 of 217

Quantum dot semiconductor optical amplifiers

July 1, 2000
Author(s)
Richard P. Mirin, D. J. Blumenthal
A new traveling-wave semiconductor optical amplifier using self-assembled quantum dots as the gain medium is proposed and analyzed. Cross-gain modulation is greatly reduced when the quantum dots are electronically uncoupled.

Compound semiconductor oxide antireflection coatings

May 15, 2000
Author(s)
K. J. Knopp, Richard Mirin, Kristine A. Bertness, Kevin L. Silverman, David H. Christensen
We report the development of high quality, broad-bandwidth, antireflection (AR) coatings using the low index provided by wet thermally oxidized Al 0.98Ga 0.02As. We address the design criteria, fabrication, and characterizations of AR coatings composed of

High-Speed Resonant Cavity Enhanced Photodiodes

December 1, 1999
Author(s)
M. S. {Umlat}nl{umlat}, E. Vzbay, E. Towe, Richard Mirin, David H. Christensen
We have demonstrated RCE Schottky phodiodes with GaAs absorption regions in AlGaAs/AlAs microcavities (3).

High-speed > 90 % quantum-efficiency p-i-n photodiodes with a resonance wavelength adjustable in the 795-835 range

February 22, 1999
Author(s)
E. Vzbay, I. Kimukin, N. Biyikli, O. Ayt|r, M. Gvkkavas, G. Ulu, M. S. {Umlat}nl{umlat}, Richard Mirin, Kristine A. Bertness, David H. Christensen
We report GaAs/AlGaAs-based high-speed, high-efficiency, resonant cavity enhanced p-i-n photodiodes. The devices were fabricated by using a microwave-compatible fabrication process. By using a postprocess recess etch, we tuned the resonance wavelength from

Ultrafast photodetectors with near-unity quantum efficiency

January 1, 1999
Author(s)
G. Ulu, M. Gvkkavas, M. S. {Umlat}nl{umlat}, N. Biyikli, E. {Omlat}zbay, Richard Mirin, David H. Christensen
We designed, fabricated and characterized Al xGa 1-xAs/GaAs p-i-n resonant cavity enhanced (RCE) photodetectors with near-unit quantum efficiency. The peak wavelength is in the 780-830 nm region and post-process adjustable by recessing the top surface

Optical constants of (Al 0.98 Ga 0.02 ) x O y native oxides

December 14, 1998
Author(s)
K. J. Knopp, Richard Mirin, David H. Christensen, Kristine A. Bertness, Alexana Roshko, R A. Synowicki
We report the optical constants of oxidized crystalline and low-temperature-grown (LTG) Al 0.98Ga 0.02As films, as determined by variable angle spectroscopic ellipsometry. Data were acquired at three angles of incidence over 240-1700nm and fit to a Cauchy

High bandwidth-efficiency resonant cavity enhanced Schottky photodiodes for 800-850 nm wavelength operation

May 25, 1998
Author(s)
M. S. {Umlat}nl{umlat}, M. Gvkkavas, B. M. Onat, E. Ata, E. Vzbay, Richard Mirin, K. J. Knopp, Kristine A. Bertness, David H. Christensen
High-speed resonant cavity enhanced Schottky photodiodes operating in 800-850 nm wavelength region are demonstrated. The devices are fabricated in the AlGaAs/GaAs mate1ial system. The Schottky contact is a semitransparent Au film which also serves as the