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Search Publications by: Kevin L. Silverman (Fed)

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Displaying 51 - 75 of 87

Wavelength bistability in two-section mode-locked quantum-dot diode lasers

June 1, 2007
Author(s)
Mingming M. Feng, N. A. Brilliant, Steven T. Cundiff, Richard Mirin, Kevin L. Silverman
We report a two-section mode-locked quantum dot laser with an emission wavelength that is bistable with respect to applied bias on the saturable absorber region. The two stable lasing wavelengths for this device are 1173 nm and 1166 nm with a power

Temperature dependence of quantum dot homogeneous linewidth

May 26, 2006
Author(s)
Joseph J. Berry, Martin Stevens, Richard Mirin, Kevin L. Silverman
We examine the temperature dependence of the ground state homogeneous linewidth in InGaAs/GaAs quantum dots. Measurements are performed on quantum dots in a semiconductor waveguide.

High-resolution spectroscopic measurements of InGaAs/GaAs self-assembled quantum dots

May 12, 2006
Author(s)
Joseph J. Berry, Martin Stevens, Richard Mirin, Kevin L. Silverman
We report development of two absorption-based spectroscopic methods that have been adapted from atomic physics techniques to elucidate the basic physical properties of InGaAs/GaAs self-assembled quantum dots(SAQDs). Absorptive spectroscopic measurements

High-resolution spectral hole burning in InGaAs/GaAs quantum dots

February 10, 2006
Author(s)
Joseph J. Berry, Martin Stevens, Richard Mirin, Kevin L. Silverman
We report the use of continuous wave spectral hole burning to perform high-resolution spectroscopy of the homogeneous linewidth of self-assembled InGaAs/GaAs quantum dots at low temperature. We use this technique to examine the power broadening behavior of

Carrier Dynamics and Homogeneous Broadening in Quantum Dot Waveguides

January 1, 2005
Author(s)
Kevin L. Silverman, Richard P. Mirin, Steven T. Cundiff, Benjamin Klein,
Coupling between InGaAs/GaAs quantum dots is investigated using differential transmission spectroscopy. Degenerate measurements show an initial carrier relaxation time that is relatively independent of carrier density. Two-color pump-probe techniques are

Photoluminescence from an Nd3+ doped AlGaAs semiconductor structure

May 16, 2004
Author(s)
Kirk Ullmann, Mark Su, Kevin L. Silverman, Joseph J. Berry, Todd E. Harvey, Richard Mirin
We report room temperature photoluminescence from a Nd3+ doped AlGaAs semiconductor. Oxidation of the AlGaAs greatly improves the luminescence efficiency of the Nd3+ ions.