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Search Publications by: Matthew Brubaker (Fed)

Displaying 76 - 79 of 79

Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth growth on MBE nanowires

October 25, 2011

Author(s)

Aric Sanders, Paul T. Blanchard, Kristine A. Bertness, Matthew D. Brubaker, Ann Chiaramonti Debay, Christopher M. Dodson, Todd E. Harvey, Andrew M. Herrero, Devin M. Rourke, John B. Schlager, Norman Sanford, Albert Davydov, Abhishek Motayed, Denis Tsvetkov

We present the homoepitaxial growth of p-type, magnesium-doped gallium nitride shells using halide vapor phase epitaxy on n-type gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy. Scanning electron microscopy shows clear dopant

Effect of AlN Buffer Layer Properties on the Morphology and Polarity of GaN Nanowires Grown by Molecular Beam Epitaxy

September 8, 2011

Author(s)

Matthew D. Brubaker, Kristine A. Bertness, Norman A. Sanford, Albert Davydov, Igor Levin, Devin M. Rourke, Victor M. Bright

Low temperature AlN buffer layers grown by plasma-assisted Molecular Beam Epitaxy (MBE) on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions