U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by: Shannon Duff (Fed)

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 26 - 35 of 35

Quasiparticle recombination in hotspots in superconducting current-carrying nanowires

August 6, 2015
Author(s)
Alex Kozorezov, Colin Lambert, Francesco Marsili, Martin Stevens, Varun Verma, Jeffrey A. Stern, Rob Horansky, Shellee D. Dyer, Shannon Duff, David P. Pappas, Adriana Lita, Matthew D. Shaw, Richard Mirin, Sae Woo Nam
We describe a kinetic model of recombination of nonequilibrium quasiparticles generated by single photon absorption in superconducting current-carrying nanowires. The model is developed to interpret two-photon detection experiments in which a single photon

Advanced ACTPol Multichroic Polarimeter Array Fabrication Process for 150 mm Wafers

July 22, 2015
Author(s)
Shannon M. Duff, Gene C. Hilton, Johannes Hubmayr, James A. Beall, Jason E. Austermann, Daniel T. Becker, Jeffrey L. Van Lanen
Advanced ACTPol is a third generation cosmic microwave background (CMB) receiver, deploying in 2016 on the Atacama Cosmology Telescope (ACT) in the Atacama desert of Chile. Spanning five frequency bands from 25 – 280 GHz and having a total of nearly 5800

Selective Area Growth of Ga- and N-polar GaN Nanowire Arrays on Non-Polar Si (111) Substrates

September 7, 2014
Author(s)
Matthew D. Brubaker, Shannon M. Duff, Todd E. Harvey, Paul T. Blanchard, Alexana Roshko, Aric W. Sanders, Norman A. Sanford
This study presents a technique for obtaining Ga- and N-polar Gallium Nitride nanowire (GaN NW) arrays on non-polar Si (111) substrates by use of polarity-controlled AlN/GaN buffer layers. AlN films are demonstrated to adopt Al-/N-polarity for N-/Al-rich

In situ temperature measurements for selective epitaxy of GaN nanowires

February 17, 2014
Author(s)
Kristine A. Bertness, Matthew D. Brubaker, Todd E. Harvey, Shannon M. Duff, Aric W. Sanders, Norman A. Sanford
We demonstrate with spatially resolved, in situ temperature measurements and ex situ reflectance measurements that differences in appearance for masked and unmasked surfaces on patterned growth substrates arise from wavelength-dependent emissivity

Gallium Nitride Nanowires for On-Chip Optical Interconnects on Ex-Situ Substrates

January 16, 2013
Author(s)
Matthew D. Brubaker, Paul T. Blanchard, John B. Schlager, Aric W. Sanders, Alexana Roshko, Shannon M. Duff, Jason Gray, Victor M. Bright, Norman A. Sanford, Kristine A. Bertness
In this letter we report on the fabrication, device characteristics, and optical coupling of a two-nanowire device comprising light-emitting diode and photoconductive GaN nanowires. Axial p-n junction GaN nanowires were grown by molecular beam epitaxy