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Search Publications by: Daniel Gopman (Fed)

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Displaying 1 - 25 of 65

Reduction-Induced Magnetic Behavior in LaFeO3-d Thin Films

March 4, 2024
Author(s)
Nathan Arndt, Eitan Hershkovitz, Labdhi Shah, Kristoffer Kjaernes, Chao-Yao Yang, Purnima Balakrishnan, Mohammed Shariff, Shaun Tauro, Daniel Gopman, Brian Kirby, Alexander Grutter, Thomas Tybell, Honggyu Kim, Ryan Need
The effect of oxygen reduction on the magnetic properties of LaFeO3−δ (LFO) thin films was studied to better understand the viability of LFO as a candidate for magnetoionic memory. Differences in the amount of oxygen lost by LFO and its magnetic behavior

Voltage Modulated Magnetic Anisotropy of Rare Earth Iron Garnet Thin Films on a Piezoelectric Substrate

December 19, 2022
Author(s)
Miela Gross, Walid Al Misba, Kensuke Hayashi, Dhritiman Bhattacharya, Daniel Gopman, Jayasimha Atulasimha, Caroline Ross
Voltage-tuning of the magnetic anisotropy is dempnstrated in ferrimagnetic insulating rare earth iron garnets on a piezoelectric substrate, (011)-oriented PMN-PT. A yttrium-substituted dysprosium iron garnet (YDyIG) film 42 nm thick is grown via pulsed

Ferromagnetic resonance and magnetization switching characteristics of perpendicular magnetic tunnel junctions with synthetic antiferromagnetic free layers

January 4, 2022
Author(s)
deyuan lyu, Delin Zhang, Daniel Gopman, Yang Lv, Onri Benally, Jian-Ping Wang
Perpendicular magnetic tunnel junctions (pMTJs) with synthetic antiferromagnetic (SAF) free layers were predicted and recently demonstrated to possess ultrahigh switching speed and ultralow switching current density. However, ferromagnetic resonance (FMR)

Perpendicular magnetic tunnel junctions with multi-interface free layer

December 15, 2021
Author(s)
Pravin Khanal, Bowei Zhou, Magda Andrade, Yanliu Dang, Albert Davydov, Ali Habiboglu, Jonah Saidian, Adam Laurie, Jian-Ping Wang, Daniel Gopman, Weigang Wang
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular magnetic tunnel