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Search Publications by: Adam Biacchi (Fed)

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Displaying 26 - 41 of 41

High-throughput Density Functional Perturbation Theory and Machine Learning Predictions of Infrared, Piezoelectric and Dielectric Responses

May 27, 2020
Author(s)
Kamal Choudhary, Kevin F. Garrity, Vinit Sharma, Adam J. Biacchi, Francesca M. Tavazza, Angela R. Hight Walker
In this work, combining high-throughput (HT) density functional perturbation theory and supervised machine learning approaches, we explored the territory of compounds with interesting infrared, piezoelectric and dielectric properties. We have computed Γ

Global alignment of solution-based single-wall carbon nanotube films via machine-vision controlled filtration

September 11, 2019
Author(s)
Jeffrey A. Fagan, Angela R. Hight Walker, Adam J. Biacchi, Joshua S. Walker, William D. Rice, Thomas Searles, Valerie A. Kuehl
Over the past decade, substantial progress has been made in the chemical processing (chiral enrichment, length sorting, handedness selectivity, and filling substance) of single- wall carbon nanotubes (SWCNTs). Recently, it was shown that large

Correlating anisotropic mobility and intermolecular phonons in organic semiconductors to investigate transient localization

March 19, 2019
Author(s)
Emily G. Bittle, Adam J. Biacchi, Lisa A. Fredin, Andrew A. Herzing, Thomas C. Allison, Angela R. Hight Walker, David J. Gundlach
Charge transport in organic semiconductors is governed by a mix of polaron hopping and band- like transport mechanisms. The energy of polaron hopping and formation are similar in magnitude to the energies of inter- and intra- molecular modes, which points

Electrical Detection of Singlet Fission in Single Crystal Tetracene Transistors

January 4, 2019
Author(s)
Hyuk-Jae Jang, Emily Bittle, Qin Zhang, Adam Biacchi, Curt A. Richter, David J. Gundlach
Here, we present the electrical detection of singlet fission in tetracene by using a field- effect transistor (FET). Singlet fission is a photo-induced spin-dependent process yielding two triplet excitons from the absorption of a single photon. , In this

Contact and Non-Contact Measurement of Electronic Transport in Individual 2D SnS Colloidal Semiconductor Nanocrystals

September 24, 2018
Author(s)
Adam J. Biacchi, Son T. Le, Brian G. Alberding, Joseph A. Hagmann, Sujitra J. Pookpanratana, Edwin J. Heilweil, Curt A. Richter, Angela R. Hight Walker
Colloidal-based solution syntheses offer a scalable and cost-efficient means of producing 2D nanomaterials in high yield. While much progress has been made towards the controlled and tailorable synthesis of semiconductor nanocrystals in solution, it

High-throughput assessment of vacancy formation and surface energies of materials using classical force-fields

September 7, 2018
Author(s)
Kamal Choudhary, Adam J. Biacchi, Supriyo Ghosh, Lucas M. Hale, Angela R. Hight Walker, Francesca M. Tavazza
In this work, we present an open access database for surface and vacancy-formation energies using classical force-fields (FFs). These quantities are essential in understanding diffusion behavior, nanoparticle formation and catalytic activities. FFs are

Elucidating the Structural and Electronic Properties of Solution-Synthesized 2D SnS Crystals

March 28, 2017
Author(s)
Adam J. Biacchi, Brian G. Alberding, Son T. Le, Joseph A. Hagmann, Sugata Chowdhury, Curt A. Richter, Edwin J. Heilweil, Angela R. Hight Walker
The vast majority of nanoscale 2D materials are synthesized by exfoliation or gas phase deposition techniques. Alternatively, bottom-up colloidal solution syntheses offer a scalable and cost-efficient means of producing 2D nanomaterials in high yield

Charge Carrier Dynamics and Mobility Determined by Time-Resolved Terahertz Spectroscopy on Films of Nano-to-Micrometer-Sized Colloidal Tin(II) Monosulfide

August 1, 2016
Author(s)
Brian Alberding, Adam Biacchi, Angela R. Hight Walker, Edwin J. Heilweil
Tin(II) monosulfide (SnS) is a semiconductor material with an intermediate band gap, high absorption coefficient is the visible range, and consists of earth abundant, non-toxic elements. For these reasons, SnS has generated much interest for incorporation