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Search Publications by: Albert F. Rigosi (Fed)

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Displaying 51 - 75 of 86

Advanced Temperature-Control Chamber for Resistance Standards

April 10, 2020
Author(s)
Shamith Payagala, Alireza Panna, Albert Rigosi, Dean G. Jarrett
Calibration services for resistance metrology have continued to advance their capabilities and establish new and improved methods for maintaining standard resistors. Despite the high quality of these methods, there still exist inherent limitations to the

A self-assembled graphene ribbon grown on SiC

January 2, 2020
Author(s)
Bi Y. Wu, Yanfei Yang, Albert Rigosi, Jiuning Hu, Hsin Y. Lee, Guangjun Cheng, Vishal Panchal, Mattias Kruskopf, Hanbyul Jin, Kenji Watanabe, Takashi Taniguchi, David B. Newell, Randolph Elmquist, Chi-Te Liang

Dielectric properties of Nb_x}W_1-x}Se_2} alloys

December 16, 2019
Author(s)
Albert Rigosi, Heather M. Hill, Sergiy Krylyuk, Nhan V. Nguyen, Angela Hight Walker, Albert Davydov, David Newell
The growth of transition metal dichalcogenide (TMDC) alloys provides an opportunity to experimentally access information elucidating how optical properties change with gradual substitutions in the lattice compared with their pure compositions. In this work

Comparison of Multiple Methods for Obtaining PO Resistances with Low Uncertainties

September 3, 2019
Author(s)
Kwang Min Yu, Dean G. Jarrett, Albert Rigosi, Shamith Payagala, Marlin E. Kraft
Capabilities for high resistance determinations are essential for calibration of currents below 1 pA, as typically requested in several applications, including semiconductor device characterization, single electron transport, and ion beam technologies

Designing new structures in epitaxial graphene on SiC: transport and quantum effects

May 13, 2019
Author(s)
Randolph E. Elmquist, Hanbyul Jin, Mattias Kruskopf, Martina Marzano, Dinesh K. Patel, Alireza R. Panna, Albert F. Rigosi
When epitaxial graphene (EG) grows on hexagonal SiC(0001), chemical doping is produced by bonds at the epitaxial interface, or buffer layer. Robust quantum Hall effect (QHE) plateaus are observed at RK/2 = h/2e2, where RK is a constant of electrical

Utilizing confocal laser scanning microscopy for rapid optical characterization of graphene

November 20, 2018
Author(s)
Vishal Panchal, Yanfei Yang, Guangjun Cheng, Jiuning Hu, Mattias Kruskopf, Chieh-I Liu, Albert Rigosi, Christos Melios, Angela R. Hight Walker, David B. Newell, Olga Kazakova, Randolph Elmquist
Confocal laser scanning microscopy (CLSM) is a non-destructive, highly-efficient optical characterization method for large-area analysis of graphene on different substrates, which can be applied in ambient air, does not require additional sample

Quantum transport in graphene p-n junctions with Moire superlattice modulation

July 12, 2018
Author(s)
Jiuning Hu, Albert Rigosi, Ji Ung Lee, Hsin Y. Lee, Yanfei Yang, Chieh-I Liu, Randolph Elmquist, David B. Newell
This work presents simulations of quantum transport in graphene p-n junctions (pnJs) in which Moire superlattice potentials are incorporated to demonstrate the interplay of the effect of pnJs and Moire superlattice potentials. It is shown that the