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Search Publications by: Fan Fei (IntlAssoc)

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Displaying 1 - 3 of 3

Design, modeling, and fabrication of high frequency Oersted lines for electron spin manipulation in silicon based quantum devices

October 25, 2024
Author(s)
Pradeep Namboodiri, Mark-yves Gaunin, Alessandro Restelli, Ranjit Kashid, Xiqiao Wang, Fan Fei, Brian Courts, FNU Utsav, Vijith Kamalon Pulikodan, Jonathan Wyrick, Richard M. Silver
Coherent manipulation of electron spins is one of the central problems of silicon-based quantum computing efforts. Electron spin resonance (ESR) lines, or Oersted lines, allow high frequency RF pulses to induce an electromagnetic field that drives Rabi

Multi-scale alignment to buried atom-scale devices using Kelvin probe force microscopy

February 24, 2024
Author(s)
Pradeep Namboodiri, Jonathan Wyrick, Gheorghe Stan, Xiqiao Wang, Fan Fei, Ranjit Kashid, Scott Schmucker, Richard Kasica, Bryan Barnes, Michael Stewart, Richard M. Silver
Fabrication of quantum devices by atomic scale patterning with a Scanning Tunneling Microscope (STM) has led to the development of single/few atom transistors, few-donor/quantum dot devices for spin manipulation and arrayed few-donor devices for analog

Enhanced Atomic Precision Fabrication by Adsorption of Phosphine into Engineered Dangling Bonds on H-Si Using STM and DFT

November 1, 2022
Author(s)
Jonathan Wyrick, Xiqiao Wang, Pradeep Namboodiri, Ranjit Kashid, Fan Fei, Joseph Fox, Richard M. Silver
Doping of Si using the scanning probe technique of hydrogen depassivation lithography has been shown to enable placing and positioning small numbers of P atoms with nanometer accuracy. Several groups have now used this capability to build devices that