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Search Publications by: Stephen Moxim (Fed)

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Displaying 1 - 6 of 6

Spectroscopy of photoionization from the 1E singlet state in nitrogen-vacancy centers in diamond

October 17, 2024
Author(s)
Sean Blakley, Thuc Mai, Stephen Moxim, Jason Ryan, Adam Biacchi, Angela Hight Walker, Robert McMichael
The 1E—1A1 singlet manifold of the negatively charged nitrogen vacancy (NV −) center in diamond plays a central role in the quantum information and quantum sensing applications of the NV − center. However, the energy of this manifold within the diamond

Continuum of Spin Excitations in the Exactly Solvable Triangular-Lattice Spin Liquid CeMgAl11O19

August 28, 2024
Author(s)
Bin Gao, Tong Chen, Chunxaio Liu, Mason Klemm, Shu Zhang, Zhen Ma, Xianghan Xu, CHOONGJAE WON, Dongzhe Dai, Gregory McCandless, Maiko Kofu, Naoki Murai, Stephen Moxim, Jason Ryan, Xiaozhou Huang, Xiaoping Wang, Julia Chan, Shiyan Li, Sang-Wook Cheong, Oleg Tchernyshyov, Leon Balents, Pengcheng Dai
In magnetically ordered insulators, elementary quasiparticles manifest as spin waves - collective motions of localized magnetic moments that propagate through the lattice - observed via inelastic neutron scattering. In effective spin- 1/2 systems where

Tunable zero-field magnetoresistance responses in Si transistors: Origins and applications

April 16, 2024
Author(s)
Stephen Moxim, Nicholas Harmon, Kenneth Myers, James P Ashton, Elias Frantz, Michael Flatte, Patrick Lenahan, Jason Ryan
The near-zero-field magnetoresistance (NZFMR) response has proven to be a useful tool for studying atomic-scale, paramagnetic defects that are relevant to the reliability of semiconductor devices. The measurement is simple to make and, in some cases

Near Zero Field Magnetoresistance Spectroscopy: A New Tool in Semiconductor Reliability Physics

May 15, 2023
Author(s)
Patrick Lenahan, Elias Frantz, Sean King, Mark Anders, Stephen Moxim, James P Ashton, Kenneth Myers, Michael Flatte, Nicholas Harmon
A relatively simple addition to many widely utilized semiconductor device characterization techniques can allow one to identify much of the atomic scale structure of point defects which play important roles in the electronic properties of the devices under