Dagata, J.
, Tseng, W.
, Bennett, J.
, Evans, C.
, Schneir, J.
and Harary, H.
(1990),
Selective-Area Epitaxial Growth of Gallium Arsenide on Silicon Substrates Patterned Using a Scanning Tunneling Microscope Operating in Air, Applied Physics Letters
(Accessed July 27, 2024)
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Selective-Area Epitaxial Growth of Gallium Arsenide on Silicon Substrates Patterned Using a Scanning Tunneling Microscope Operating in Air
Published
Author(s)
, W. F. Tseng, J. Bennett, C J. Evans, J. Schneir,
Citation
Applied Physics Letters
Volume
57
Issue
23
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 2, 1990, Updated October 12, 2021