Thorbeck, T.
, Fujiwara, A.
and Zimmerman, N.
(2012),
Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model, Applied Physics Letters, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=910154
(Accessed October 18, 2025)
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Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model
Published
Author(s)
, Akira Fujiwara,
Abstract
The ability to design gate capacitances to quantum dots is critical for many applications of quantum dots from quantum information and single electron logic to standards. We have studied and simulated many multi-gate silicon quantum dot devices fabricated with different dimensions and can draw three conclusions. (1) The gate capacitances to the quantum dots are reproducible to within 10% for nominally identical devices. (2) Gate capacitances scale with device dimensions. (3) A capacitance simulator can predict gate capacitances to within 20% without using any fitting parameters.Citation
Applied Physics Letters
Pub Type
Journals
Download Paper
Keywords
gate capacitance, quantum dots, silicon, coulomb blockade
Citation
Issues
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Created September 5, 2012, Updated August 27, 2018