Bennett, H.
(2002),
A Systematic Approach for Multidimensional, Closed-Form Analytic Modeling: Mobilities and Effective Intrinic Carrier Concentrations in p-type Ga<sub>1-x</sub>Al<sub>x</sub>As, Solid-State Electronics
(Accessed January 13, 2025)
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A Systematic Approach for Multidimensional, Closed-Form Analytic Modeling: Mobilities and Effective Intrinic Carrier Concentrations in p-type Ga1-xAlxAs
Published
Author(s)
Abstract
The changes in carrier densities of states, band structures, mobilities, and effective intrinsic carrier concentrations nie due to high concentration effects of dopants and carriers have been calculated for acceptor densities that span the Mott transition between 1016cm-3 and 1020cm-3 in p-type Ga1-xAlxAs.Citation
Solid-State Electronics
Volume
46
Pub Type
Journals
Citation
Issues
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Created October 1, 2002, Updated January 27, 2020