Pavlidis, G.
, Jamil, M.
, Keebaugh, S.
, Chang, J.
, Doerflein, M.
, Afroz, S.
, Howell, R.
and Centrone, A.
(2024),
Thermal engineering increases current density in AlGaN/GaN superlattice devices, Applied Physics Letters, [online], https://doi.org/10.1063/5.0214487, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=956368
(Accessed July 27, 2024)
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Thermal engineering increases current density in AlGaN/GaN superlattice devices
Published
Author(s)
, Muhammad Jamil, Shawn Keebaugh, Josei Chang, Matthew Doerflein, Shamima Afroz, Robert S. Howell,
Citation
Applied Physics Letters
Volume
125
Issue
1
Pub Type
Journals
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If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created July 1, 2024, Updated July 22, 2024