Tunable ultraviolet photoresponse in solution-processed p-n junction photodiodes based on transition metal oxides

Published

April 21, 2015

Author(s)

Ting Xie, Guannan Liu, Baomei Wen, Jong Y. Ha, Nhan Van Nguyen, Abhishek Motayed, Ratan K. Debnath

Abstract

Solution-processed p-n heterojunction photodiodes have been fabricated based on transition metal oxides in which NiO and ternary Zn1-xMgxO (x = 0 - 0.1) have been employed as p-type and n-type semiconductors, respectively. Composition related structural, electrical, and optical properties are also investigated for all the films. It has been observed that the bandgap of Zn1-xMgxO films can be tuned between 3.24 eV to 3.49 eV by increasing Mg content. The fabricated highly visible-blind p-n junction photodiodes show excellent rectification along with good photoresponse and quantum efficiency under UV illumination. With an applied reverse bias of 1 V and depending on the value of x, the maximum responsivity and detectivity of the devices varied between (0.22 - 0.4) A/W and (0.17 - 2.2) × 1012 Jones, respectively. The photodetectors show excellent UV to visible rejection ratio. Compositional non-uniformity has been observed locally in the alloyed films with x = 0.1, which is being manifested in photoresponse and x-ray analysis data. Over all, this paper shows a simple solution-processed, low cost, band tunable photodiodes with excellent figures of merit operated under low bias

Citation

ACS Applied Materials and Interfaces

Pub Type

Journals

Citation

Xie, T. , Liu, G. , Wen, B. , Ha, J. , Nguyen, N. , Motayed, A. and Debnath, R. (2015), Tunable ultraviolet photoresponse in solution-processed p-n junction photodiodes based on transition metal oxides, ACS Applied Materials and Interfaces (Accessed July 17, 2024)