Wafer-Level Magnetotransport Measurement of Advanced Transistors – Making a Powerful Technique Even More Powerful

Published

November 1, 2010

Author(s)

Kin P. Cheung, Jason P. Campbell, Liangchun (. Yu

Abstract

For transistor research and development, one of the important figures of merit is the carrier mobility. The measurement of mobility is cumbersome in large devices, and nearly impossible in nano scale devices. Very often, effective mobility is extracted from the I-V curve instead. There are many pitfalls in equating that to mobility, including charge-trapping and series resistance effects. The error can be quite large. This is a urgent issue for advanced CMOS technology. In this paper, two novel advances in mobility measurement introduced by our group recently are presented. Both are Hall Effect based and are well known. Our innovations enable both techniques to be deployed easily in any laboratory as well as factory floor.

Conference Dates

November 1-4, 2010

Conference Location

Shanghai,

Conference Title

10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

Pub Type

Conferences

Keywords

Carrier mobility, MOSFET, magnetoresistance, Hall effect

Citation

Cheung, K. , Campbell, J. and Yu, L. (2010), Wafer-Level Magnetotransport Measurement of Advanced Transistors – Making a Powerful Technique Even More Powerful, 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Shanghai, (Accessed January 2, 2025)