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Physical Measurement Laboratory

Nanoscale Device Characterization Division

Projects/Programs

Displaying 51 - 61 of 61
Schematic of device structure designed to utilize novel spin current generation in a ferromagnet (FM) to achieve electrical switching of a perpendicularly magnetized FM layer

Spin-orbit interaction in devices and quantum materials

Ongoing
The spin degree of freedom can provide a basis for next-generation electronic devices. Spintronic devices typically include materials with magnetic ordering, such as ferromagnets or antiferromagnets. The state of the magnetization influences charge and spin current through an effect known as
Fig. 1. Die containing 285 superparamagnetic tunnel junctions.

Spintronics for Neuromorphic Computing

Ongoing
Magnetic tunnel junctions (see Fig. 1) consist of two thin films of ferromagnetic material separated by a few atomic layers of an insulating material. The insulator is so thin that electrons can tunnel quantum mechanically through it. The rate at which the electrons tunnel is affected by the

Structure, Defects, and Scattering in Graphene

Completed
The graphene honeycomb lattice is a key element in determining many of graphene's spectacular properties, which are desirable for a host of electronic applications. The graphene 6-fold symmetric lattice gives rise to charge carriers behaving like light-waves having zero mass. The charge carriers in
Fig. 1. Time re-Envisioned: Not a biproduct of computation but the domain in which information is encoded. Leads to different mathematical functions becoming energy efficient primitives.

Temporal Computing

Ongoing
In standard integrated circuits, information that is coded as ones and zeros is implemented by voltages on wires being high or low. The circuits consume energy during transitions between these voltages. Binary numbers have a voltage per bit so there are a lot of transitions each time a number
Schematic of a radial p- n- Junction

Theory and Modeling of Materials for Renewable Energy

Ongoing
Nanostructured materials offer potential benefits for a range of renewable energy applications that rely critically on interfaces for separating charges, including photovoltaics, thermoelectrics, and electrochemical energy storage. The use of nanostructures allows scientists and engineers to
A current (white arrow) flowing through a tantalum film generates a current of spins (dark blue arrows) that impinges on the ferromagnetic cobalt iron boron layer and causes the magnetization (gold arrow) to charge directions (light blue arrow).

Theory of Spin-Orbit Torque

Ongoing
A ferromagnetic material such as iron acquires its magnetization because the magnetic orientation of its constituent atoms all line up in the same way. Because individual electrons also have an intrinsic magnetic moment – which is often referred to as the electron “spin” - they can interact with
David Gundlach

Thin Film Electronics (Archived)

Completed
Today's electronics have reached a point where sheer computation power has yielded to combined form and function as the key driver of large consumer markets. The demand for portable and pervasive electronics with greater functionality promises significant changes over the next decades in how society