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Two-dimensional (2D) materials* such as molybdenum-disulfide (MoS 2) are attracting much attention for future electronic and photonic applications ranging from
X-ray photoelectron spectroscopy (XPS) is one of the most sensitive and informative surface analysis techniques available. However, XPS requires a high vacuum
NIST hosted the Board of Directors of the International Electronics Manufacturing Initiative (iNEMI) on Wednesday, Dec. 10, 2014, for a half-day overview on
Michael Postek of PML's Semiconductor & Dimensional Metrology Division has been an instrumental part of an outreach to bring access to tabletop scanning
In November, 2014, NIST hosted the seventh in a series of workshops in a NIST-Intel partnership effort on Emerging Nanoscale Interface and Architecture
Single-walled carbon nanotubes are loaded with desirable properties. In particular, the ability to conduct electricity at high rates of speed makes them
An international team led by researchers from the NIST Center for Nanoscale Science and Technology have discovered a new way to simultaneously image both the
Researchers from the NIST Center for Nanoscale Science and Technology (CNST) and the University of Maryland have for the first time used photothermal induced
The National Institute of Standards and Technology (NIST) has contributed to the development of a new standard for defining the performance of micromechanical
Photovoltaic devices, also known as solar cells, produce electrical power when exposed to light, and that technology has enabled a fast-growing industry. The
Recent experiments have confirmed* that a technique developed several years ago at the National Institute of Standards and Technology (NIST) can enable optical
Using a relatively straightforward technique, a team of NIST researchers has created what may be the most highly enriched silicon currently being produced. The
Changing the polarity of the magnetic field response of a material one thousandth the width of a human hair may seem like the stuff of science fiction, but that
Angela Hight Walker of PML's Semiconductor and Dimensional Metrology Division and colleagues have succeeded in measuring a previously unknown but essential
Nerve agents are among the world's most feared chemical weapons, but scientists at the National Institute of Standards and Technology (NIST) have demonstrated a
Microscopes don't exactly lie, but their limitations affect the truths they can tell. For example, when operated in their most typical high-energy modes
When the semiconductor industry received the eagerly awaited annual update of the International Technology Roadmap for Semiconductors (ITRS) [1] at the end of
Researchers from the NIST Center for Nanoscale Science and Technology (CNST), in collaboration with researchers from University of Lyon, France, have applied a
An international collaboration led by researchers from the NIST Center for Nanoscale Science and Technology (CNST) has made significant progress in modelling
Steve Blankenship, an Instrumentation Specialist in the NIST Center for Nanoscale Science and Technology (CNST), has been awarded the 2013 George T. Hanyo Award
Scientists from the National Institute of Standards and Technology (NIST) and Sandia National Laboratories have added something new to a family of engineered
Researchers from the NIST Center for Nanoscale Science and Technology (CNST) have demonstrated a new low energy electron beam technique and used it to probe the
A fundamental advance in measurement capabilities that could save semiconductor manufacturers billions of dollars annually has earned a 2013 R&D 100 Award for
While nanomaterials have led to major advances in key U.S. industries, especially the semiconductor industry, their technological promises and possibilities are