Low-Ohmic Resistance Comparison: Measurement Capabilities and Resistor Traveling Behavior

Published

March 1, 2016

Author(s)

Marlin E. Kraft, Randolph E. Elmquist, Gert Rietveld, Jan van der Beek, Alessandro Mortara, Beat Jeckelmann

Abstract

The low-ohmic resistance measurement capabilities of the Van Swinden Laboratorium, National Institute of Standards and Technology, and the Federal Office of Metrology (METAS) were compared using a set of resistors with values 100 mΩ, 10 mΩ, 1 mΩ, and 100 μΩ, respectively. The measurement results of the three laboratories agree extremely well within the respective measurement uncertainties with the comparison reference value. Careful transport of the resistors was crucial for achieving this result. Still, some of the resistors showed steps in value at each transport which likely relates to the construction of the resistance elements of these resistors.

Citation

IEEE Transactions on Instrumentation and Measurement

Volume

62

Issue

6

Pub Type

Journals

Keywords

comparison, low-ohmic measurements, precision measurements, resistance measurements, resistors, shunts, traveling behavior

Citation

Kraft, M. , Elmquist, R. , Rietveld, G. , van, J. , Mortara, A. and Jeckelmann, B. (2016), Low-Ohmic Resistance Comparison: Measurement Capabilities and Resistor Traveling Behavior, IEEE Transactions on Instrumentation and Measurement (Accessed October 18, 2025)