Photoluminescence Polarization in Strained GaN/AlGaN Core/Shell Nanowires

Published

August 17, 2012

Author(s)

G. Jacopin, L. Rigutti, S. Bellei, P. Lavenus, F. H. Julien, Albert Davydov, Denis Tsvetkov, Kristine A. Bertness, Norman Sanford, John B. Schlager, M. Tchemycheva

Abstract

The polarization properties of GaN/AlGaN core/shell nanowire (NW) heterostructures have been investigated using polarization resolved micro-photoluminescence (µ-PL) and interpreted in terms of a strain dependent 6x6 k.p theoretical model. The NW heterostructures were fabricated in 2 steps: the n-type c-axis GaN NW cores were grown by molecular beam epitaxy (MBE) and then epitaxially overgrown using a halide vapor phase epitaxy (HVPE) to form p-AlGaN shells. The emission of the uncoated strain-free GaN NW core is shown to be polarized perpendicular to the c-axis, while the GaN core compressively strained by the AlGaN shell exhibits a polarization parallel to the NW c-axis. The luminescence of the AlGaN shell is weakly polarized perpendicular to the c-axis due to the tensile axial strain in the shell.

Citation

Nanotechnology

Volume

23

Issue

32

Pub Type

Journals

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DOI Link

Keywords

GaN nanowire, photoluminescence, polarization, stress

Citation

Jacopin, G. , Rigutti, L. , Bellei, S. , Lavenus, P. , Julien, F. , Davydov, A. , Tsvetkov, D. , Bertness, K. , Sanford, N. , Schlager, J. and Tchemycheva, M. (2012), Photoluminescence Polarization in Strained GaN/AlGaN Core/Shell Nanowires, Nanotechnology, [online], https://doi.org/10.1088/0957-4484/23/32/325701 (Accessed March 14, 2025)