Josh Pomeroy is an experimental physicist at the National Institute for Standards and Technology (NIST) in the Atom Scale Device Group. He performs fundamental research on materials and devices needed to do quantum information transfer between hybrid systems where one component is metal-oxide-semiconductor (MOS) quantum dot. He leads a unique effort to harness silicon color centers, atomic scale point defects that are a promising avenue to transduce quantum information in silicon quantum dots to telecom photons. The immediate objectives are to achieve projective readout of spin qubits via color centers, and eventually to achieve entanglement.
Some additional efforts include the development of ultra-highly enriched silicon for use in MOS devices, plasma processing techniques for high quality aluminum oxide, and bilayer superconductor studies for using monolithic superconducting elements on MOS systems. Two main thrust areas of this work involve: 1) enriched silicon growth, MOS device fabrication and measurement to develop stable diagnostic qubits for coupling to heterogeneous qubits; and 2) the refinement of high-quality (low defect density) metals and metal oxides that can be used in conjunction with MOS quantum devices as charge sensors or for coupling to superconducting cavities and devices.
Dr. Pomeroy graduated from Cornell University in 2002 with a M.S. and Ph.D. in Physics and received his B.A. in physics with a minor in math from Boston University in 1997.
Seeking the Power of Quantum Computing in Silicon
Enriched Silicon and Devices for Quantum Information
Precision Materials for Quantum Devices
Quantifying the environmental contributions to mass change
Measuring Up: Coming Out from the Cold
Blazing a Path for Buried Bits in Quantum Chips
Beyond Six Nines: Ultra-enriched Silicon Paves the Road to Quantum Computing
Surface Detail: Oscillator to Explore Secrets of Mass Variation
Enriched Silicon: Going for Four Nines