Elmquist, R.
, Shih, C.
, Lo, S.
, Lee, H.
and Liang, C.
(2016),
Observation of Landau Quantization and Berry Phase in Hydrogen-Intercalated Epitaxial Graphene on SiC, Science Advances
(Accessed July 19, 2024)
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Observation of Landau Quantization and Berry Phase in Hydrogen-Intercalated Epitaxial Graphene on SiC
Published
Author(s)
, Cheng-Jung Shih, Shun-Tsung Lo, Hsin-Yen Lee, Chi-Te Liang
Abstract
We here report the observed magneto-transport behavior in a hydrogen-intercalated epitaxial graphene device grown on an SiC substrate. We analyze both the longitudinal and Hall resistances in order to determine the classical carrier concentration and mobility in the low field regime, as well as the effective mass and the quantum mobility from the Shubnikov-de Haas (SdH) oscillations in the high field regime. The intrinsic Berry phase within our device is found to be 1.3π, indicating that our device consists mostly of a single layer graphene, and the expected four-fold Landau-level degeneracy is confirmed in our data, with the experimental result g_LL = 4.1.Citation
Science Advances
Volume
2
Pub Type
Journals
Keywords
Berry phase, Graphene, Landau quantization
Citation
Issues
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Created August 29, 2016, Updated May 4, 2017