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NanoFab Tool: Sandvik LPCVD Silicon Nitride
Photo of the Sandvik anneal furnaces
Credit:
NIST
The two Sandvik low pressure chemical vapor deposition (LPCVD) silicon nitride furnaces support stoichiometric and low stress silicon nitride deposition on substrates ranging from small chips to wafer diameters up to 150 mm. All samples require SC1 and SC2 cleans prior to processing.
Specifications/Capabilities
- Automatic recipe controller using Variable Parameter Table (VPT)
- Maximum Temperature: 825 °C
- Maximum Deposition Thickness: 2 µm
- Process Gases: Dichlorosilane (DCS) and ammonia (NH3)
- Standard processes:
- Stoichiometric nitride deposition
- Low stress silicon nitride deposition
- Wafer diameters: 75 mm (3 in), 100 mm (4 in), and 150 mm (6 in)
- Small pieces supported: Yes
Typical Applications
- Optical waveguides
- KOH etch mask
- Suspended membrane fabrication
- Insulator in microelectronics
Created April 10, 2019, Updated July 27, 2023