Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Tip Enhanced Raman Scattering of Graphene

Published

Author(s)

Ryan Beams

Abstract

This article reviews the mechanism of tip enhanced Raman spectroscopy (TERS) and its importance for characterizing graphene. The theoretical foundation of TERS and experimental implementation are discussed. Conventionally, Raman scattering is treated as a spatially incoherent process where the total signal is proportional to the scattering volume. However, in the near-field regime the scattered field can add coherently since the TERS interaction volume is on the same length scale as the phonon correlation length. These coherence effects are significant for two dimensional materials as will be discussed theoretically and experimentally. Therefore, TERS provides an optical method to probe phonon correlations at the nanoscale. In addition this article will review the TERS applications for characterizing defects, edges, and nanoscale strain in graphene. Finally, the outlook and future applications are discussed.
Citation
Journal of Raman Spectroscopy

Keywords

TERS, near-field microscopy, Raman scattering, graphene

Citation

Beams, R. (2017), Tip Enhanced Raman Scattering of Graphene, Journal of Raman Spectroscopy, [online], https://doi.org/10.1002/jrs.5211 (Accessed July 27, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created June 20, 2017, Updated October 18, 2022