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Aaron Katzenmeyer (Fed)
Electrical Engineer
Aaron Katzenmeyer is an electrical engineer in the Nanoscale Spectroscopy Group in the Nanoscale Device Characterization Division in NIST’s Physical Measurement Laboratory. At present, he is primarily working on programs for 1) deterministically creating, characterizing, and utilizing color centers for quantum applications and 2) atomic resolution spectroscopy enabled by scanning tunneling microscopy. Prior to joining NIST as a staff member, Aaron was a Senior Member of Technical Staff at Sandia National Laboratories (NM) in the Photonic and Phononic Microsystems organization where he worked on a wide range of technologies investigating and exploiting electrical, optical, thermal, and interrelated phenomena. Aaron was a National Research Council Postdoctoral Fellow at NIST, working on nanoscale imaging and spectroscopy at mid-IR wavelengths enabled by the photothermal effect. He received a Ph.D. in Electrical and Computer Engineering from UC Davis while performing research at Sandia National Laboratories (CA) on electrical and optoelectronic characterization of individual semiconducting nanowires and nanotubes. Aaron was a member of the first graduating class of the Erasmus Mundus Master (of) Nanoscience and Nanotechnology program, sponsored by the European Union, attending TU Delft (Netherlands), KU Leuven (Belgium), and performing research at imec on molecular electronic non-volatile resistive memory. He received a B.S.E.E. from Ohio University with a minor in Mathematics.
Aaron Michael Katzenmeyer - Google Scholar
Selected Publications
Comparison of Mg-based liquid metal ion sources for scalable focused-ion-implantation doping of GaN, M Titze, A Katzenmeyer, S Frisone, JA Ohlhausen, A Flores, DA Campbell, B Li, Y Wang, J Han, E Bielejec, R Goldman, AIP Advances 14 (4) (2024).
Suppression of Midinfrared Plasma Resonance Due to Quantum Confinement in δ-Doped Silicon, SM Young, AM Katzenmeyer, EM Anderson, TS Luk, JA Ivie, ..., Physical Review Applied 20 (2), 024043 (2023).
Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques, AM Katzenmeyer, S Dmitrovic, AD Baczewski, Q Campbell, E Bussmann, ..., Journal of Micro/Nanopatterning, Materials, and Metrology 20 (1), 014901-014901 (2021).
Assessing atomically thin delta-doping of silicon using mid-infrared ellipsometry, AM Katzenmeyer, TS Luk, E Bussmann, S Young, EM Anderson, ..., Journal of Materials Research 35 (16), 2098-2105 (2020).
Absorption spectroscopy and imaging from the visible through mid-infrared with 20 nm resolution, AM Katzenmeyer, G Holland, K Kjoller, A Centrone, Analytical Chemistry 87 (6), 3154-3159 (2015).
Mid-infrared spectroscopy beyond the diffraction limit via direct measurement of the photothermal effect, AM Katzenmeyer, G Holland, J Chae, A Band, K Kjoller, A Centrone, Nanoscale 7 (42), 17637-17641 (2015).
Patterned radial GaAs nanopillar solar cells, G Mariani, PS Wong, AM Katzenmeyer, F Léonard, J Shapiro, DL Huffaker, Nano letters 11 (6), 2490-2494 (2011).
A perspective on nanowire photodetectors: current status, future challenges, and opportunities, VJ Logeeswaran, J Oh, AP Nayak, AM Katzenmeyer, KH Gilchrist, ..., IEEE Journal of selected topics in quantum electronics 17 (4), 1002-1032 (2011).
Poole-Frenkel effect and phonon-assisted tunneling in GaAs nanowires, AM Katzenmeyer, F Léonard, AA Talin, PS Wong, DL Huffaker, Nano letters 10 (12), 4935-4938 (2010).
PATENTS
Photolithography of atomic layer resist, AM Katzenmeyer, S Misra, AD Baczewski, EM Anderson, GT Wang, ..., US Patent 11,424,135 (2022).
System and method of phase-locked fiber interferometry, AM Katzenmeyer, CT DeRose, US Patent 11,644,301 (2023).