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NanoFab Tool: Reactive Ion Etcher Oxford RIE PlasmaPro 80
Photograph of the Oxford RIE PlasmaPro 80 Etcher.
Credit:
NIST
The Oxford RIE PlasmaPro 80 etcher is a versatile parallel plate plasma etching system which uses ionized fluorocarbon and oxygen gases to etch Si, SiO2 and SiNx. The large chamber can accommodate substrates ranging from small pieces up to 200 mm diameter wafers.
Specifications/Capabilities
- Radio Frequency (RF) power source: up to 600 W.
- Process gases: Ar, O2, CHF3, CF4, SF6, C4F8, and N2.
- Reactive ion etching of silicon, silicon oxide, silicon nitride.
- Descum of optical and e-beam resists.
Usage Information
Supported Sample Sizes
- Maximum wafer diameter: 200 mm.
- Small pieces supported: Yes.
Typical Applications
- Reactive ion etching of silicon, silicon oxide, silicon nitride.
- Descum of optical and e-beam resists.
Created March 19, 2025