Elmquist, R.
, Hernandez-Marquez, F.
, Real, M.
, Shen, T.
, Newell, D.
, Jacob, C.
and Jones, G.
(2011),
Graphene: Plane and Simple Electrical Metrology?, NCSL International Annual Workshop and Symposium 2011, Washington, DC
(Accessed December 26, 2024)
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Graphene: Plane and Simple Electrical Metrology?
Published
Author(s)
, Felipe Hernandez-Marquez, Mariano Real, , , ,
Abstract
The development of large-area graphene has direct application to electrical standards including the quantized Hall resistance because of unique characteristics not found in conventional devices. These include symmetrical conduction by electrons and holes, wide separation between Landau energy levels, and an exposed surface for contacting and gating. When the potential of this new material was recognized, NIST began developing a capability to produce graphene on SiC wafers and initiated collaborations with several other institutes interested in developing and understanding the behavior of quantized Hall resistance (QHR) standards. We explain some of the special characteristics of monolayer graphene and describe our efforts to develop graphene devices as resistance standards.Proceedings Title
NCSL International Annual Workshop and Symposium 2011
Volume
99
Conference Dates
August 21-25, 2011
Conference Location
Washington, DC
Pub Type
Conferences
Keywords
graphene, quantum Hall effect, electrical resistance standards
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 7, 2011, Updated February 19, 2017