Growth, Crystal Structure, and Properties of Epitaxial BiScO3 Thin Films

Published

August 15, 2008

Author(s)

Igor Levin, Susan Trolier-McKinstry, Michael D. Biegalski, Junling Wang, Alexei A. Belik, E. Takayama-Muromachi

Abstract

Epitaxial thin films of BiScO3, a compound which is thermodynamically unstable under ambient conditions, were grown on BiFeO3-buffered SrTiO3 substrates despite the very large lattice mismatch between the film and the substrate. The epitaxial BiScO3 films retain all principal structural features of high-pressure bulk BiScO3 (i.e. octahedral tilting and the pattern of Bi displacements) that give rise to a pseudo-orthorhombic unit cell. Films grown on (100) substrates adopt the bulk monoclinic structure whereas films on the (110) substrates exhibit a somewhat different symmetry. The dielectric permittivities were modest (~30) with low loss tangents (<1% at low fields); no maxima were observed over the temperature range of -200 and +350°C. There is no evidence of significant hysteresis (either ferroelectric or antiferroelectric) at room temperature up to the breakdown strength of the films.

Citation

Journal of Applied Physics

Volume

104

Issue

4

Pub Type

Journals

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Keywords

bismuth scandate, distortions, electron microscopy, perovskite

Citation

Levin, I. , Trolier-McKinstry, S. , Biegalski, M. , Wang, J. , Belik, A. and Takayama-Muromachi, E. (2008), Growth, Crystal Structure, and Properties of Epitaxial BiScO3 Thin Films, Journal of Applied Physics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=853620 (Accessed January 2, 2025)