Martinez, J.
, Obeng, Y.
and Knight, S.
(2009),
Advanced Metrology for Nanoelectronics at the National Institute of Standards and Technology, FDP (Flat Panel Display) China 2009, Shanghai, CH, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=901409
(Accessed December 22, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Advanced Metrology for Nanoelectronics at the National Institute of Standards and Technology
Published
Author(s)
, ,
Abstract
A broad range of programs at the National Institute of Standards and Technology address critical metrology and characterization challenges facing the nanoelectronics industry. A brief history of the program will be included. From these programs we will describe some exemplary projects developing new measurement and characterization techniques for nanodevices. These will include, among others, the use of helium ion microscope, spin-transfer microwave nano-oscillators, characterization of graphene, advanced atomic force microscope, and development of a microcalorimeter-based high resolution X-ray analyzer.Conference Dates
March 11-13, 2009
Conference Location
Shanghai, CH
Conference Title
FDP (Flat Panel Display) China 2009
Pub Type
Conferences
Download Paper
Keywords
metrology, nanotechnology, graffene, spintronics, carbon nanotubes
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created March 11, 2009, Updated February 19, 2017