Singh, R.
, Capell, D.
, Hefner Jr., A.
, Lai, J.
and Palmour, J.
(2002),
High-Power 4H-SiC JBS Rectifiers, IEEE Transactions on Electron Devices, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=33103
(Accessed December 12, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
High-Power 4H-SiC JBS Rectifiers
Published
Author(s)
Ranbir Singh, D C. Capell, , Jih-Sheng Lai, John W. Palmour
Citation
IEEE Transactions on Electron Devices
Volume
49
Issue
11
Pub Type
Journals
Download Paper
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created October 31, 2002, Updated October 12, 2021