Singh, R.
, Ryu, S.
, Palmer, M.
, Hefner Jr., A.
and Lai, J.
(2000),
4 Amp 4H-SiC JBD Diodes, Proc., 2000 International Symposium on Power Semiconductor Devices and ICs, Toulouse, 1, FR, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=9146
(Accessed December 26, 2024)
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4 Amp 4H-SiC JBD Diodes
Published
Author(s)
Ranbir Singh, Sei-Hyung Ryu, M. Palmer, , Jih-Sheng Lai
Proceedings Title
Proc., 2000 International Symposium on Power Semiconductor Devices and ICs
Conference Location
Toulouse, 1, FR
Pub Type
Conferences
Download Paper
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created April 30, 2000, Updated October 12, 2021