Stiles, M.
and Hamann, D.
(1992),
Theory of Ballistic Electron Emission Spectroscopy of NiSi<sub>2</sub>/Si(111) Interfaces, Materials Science and Engineering B-Solid State Materials for Advanced Technology
(Accessed December 14, 2024)
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Theory of Ballistic Electron Emission Spectroscopy of NiSi2/Si(111) Interfaces
Published
Author(s)
, D Hamann
Abstract
We discuss theoretical calculations of ballistic electron emission microscopy spectra for A- and B-type NiSi2-Si(111) interfaces. The calculations are based on a first-principles computation of the transmission across the interfaces and a model calculation of the electrons tunneling from the tip. We compare the calculated spectra with existing experimental data and discuss a way of presenting experimental data that highlights the transmission process with respect to contributions from the tunneling distributionCitation
Materials Science and Engineering B-Solid State Materials for Advanced Technology
Volume
14
Issue
3
Pub Type
Journals
Citation
Issues
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Created January 1, 1992, Updated February 19, 2017