Waclawski, B.
, Gadzuk, J.
and Herbst, J.
(1978),
UV Photoemission for Rare Gases Implanted in Ge, Physical Review Letters
(Accessed December 26, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
UV Photoemission for Rare Gases Implanted in Ge
Published
Author(s)
B Waclawski, , J F. Herbst
Abstract
The first ultraviolet photoemission spectra of the valence electrons of rare-gas atoms, implanted by ion bombardment into an amorphous Ge matrix, are presented here. The positions of the peaks in the observed spectra are shifted relative to gas-phase spectra, consistent with a final-state screening-energy shift which varies inversely with the radius of the particular implant, as predicted by a linear-response relaxation model described herein.Citation
Physical Review Letters
Volume
41
Issue
8
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created August 20, 1978, Updated October 12, 2021