Berrie, C.
, Liu, B.
and Leone, S.
(2001),
Defect controlled diffusion in the epitaxial growth of germanium on Si(100), Applied Surface Science
(Accessed March 13, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Defect controlled diffusion in the epitaxial growth of germanium on Si(100)
Published
Author(s)
C L. Berrie, B Liu,
Citation
Applied Surface Science
Volume
175
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 31, 2000, Updated October 12, 2021