Correlation of Microwave Dielectric Properties and Microstructure of Unpatterned Ferroelectric Thin Films

Published

August 1, 2002

Author(s)

Richard G. Geyer, Melanie W. Cole, P. C. Joshi, E. Ngo, C. Hubbard, W. Nothwang, M. Bratcher, M. Ervin, M. Wood

Abstract

The influence of low concentration (1 mol%) Mg doping on the structural, microstructural, surface morphological and dielectric properties of Ba_1-xSr_xTiOd3^ thin films has been measured and analyzed. The films were fabricated on MgO and Pt-Si substrates via the metalorganic solution deposition technique using carboxylate-alkoxide precursors and post deposition annealed at 800 oC (film/MgO substrates) and 750 oC (film/Pt-Si substrates). The structure, microstructure, surface morphology and film/substrate compositional quality were analyzed and correlated to the films dielectric and insulating properties. Dielectric properties of unpatterned films were measured at 10 GHz with a coupled/split dielectric resonator system and at 100 kHz using metal-insulator-metal capacitors. The Mg-doped BST films exhibited improved dielectric loss and insulating characteristics compared to the undoped Ba_0.6Sr_0.4TiO₃ thin films. The improved dielectric properties, low leakage current, and good tunability of the low level Mg-doped BST think films merit strong potential for utilization in microwave tunable devices.

Conference Dates

April 1-5, 2002

Conference Location

San Francisco, CA, USA

Conference Title

Materials Research Society Symposium

Pub Type

Conferences

Keywords

microwave dielectric properties, unpatterned, Acceptor-doped barium strontium titanate films

Citation

Geyer, R. , Cole, M. , Joshi, P. , Ngo, E. , Hubbard, C. , Nothwang, W. , Bratcher, M. , Ervin, M. and Wood, M. (2002), Correlation of Microwave Dielectric Properties and Microstructure of Unpatterned Ferroelectric Thin Films, Materials Research Society Symposium, San Francisco, CA, USA (Accessed July 20, 2024)