Silicoboron-Carbonitride Ceramics: A Class of High Temperature, Dopable Electronic Materials

Published

May 1, 2001

Author(s)

P A. Ramakrishnan, Y T. Wang, Davor Balzar, L A. An, C Haluschka, R Riedel, A M. Hermann

Abstract

The structure and electronic properties of polymer-derived silicoboroncarbonitride ceramics are reported. Analysis of the short-range order using the radial-distribution-function formalism showed that the local structure comprises Si tetrahedra with B, C, and N at the corners . Annealing at elevated temperatures has pronounced effect on the conductivity. Boron doping of pristine ceramic leads to enhanced p-type conductivity (0.1 ohm^-1 cm^-1 at room temperature). The conductivity variation with temperature for both SiCn and SiBCN ceramics shows Mott's variable range hopping (VRH) behavior in these materials, characteristic of a highly defective semiconductor. The SiBCN ceramic has a low, positive value of thermopower, which is probably due to a compensation mechanism.

Citation

Applied Physics Letters

Volume

78

Issue

No. 20

Pub Type

Journals

Keywords

ceramic, electronic material, radial distribution function

Citation

Ramakrishnan, P. , Wang, Y. , Balzar, D. , An, L. , Haluschka, C. , Riedel, R. and Hermann, A. (2001), Silicoboron-Carbonitride Ceramics: A Class of High Temperature, Dopable Electronic Materials, Applied Physics Letters (Accessed December 26, 2024)