Co Layer Thickness Dependence of Exchange Biasing For IrMn/Co and FeMn/Co

Published

May 1, 2003

Author(s)

K A. Seu, H Huang, J F. Lesoine, H D. Showman, William F. Egelhoff Jr., L Gan, A C. Reilly

Abstract

We present a high resolution study of the ferromagnetic layer thickness dependence of exchange bias field (H_EB) and coercivity (H_C) in IrMn/Co and FeMn/Co bilayers using the magneto-optical Kerr effect. Samples are sputtered wedges on silicon with Co thicknesses ranging from 1 nm to 17 nm. The IrMn/Co (with exchange bias interface energy of ∝ 0.14 mJ/m² shows square loops, a smooth increase in H_EB with inverse thickness, and a complicated behavior for coercivity, perhaps due to competition with thickness dependent coercive mechanisms. The FeMn/Co (with exchange bias interface energy of ∝ 0.059 mJ/m² shows more rounded loops, a plateau of H_EB with decreasing thickness, and a smooth increase in coercivity with inverse thickness.

Citation

Journal of Applied Physics

Volume

93

Issue

No. 10

Pub Type

Journals

Keywords

antiferromagnetism, Co, exchange bias, IrMn, pinning

Citation

Seu, K. , Huang, H. , Lesoine, J. , Showman, H. , Egelhoff Jr., W. , Gan, L. and Reilly, A. (2003), Co Layer Thickness Dependence of Exchange Biasing For IrMn/Co and FeMn/Co, Journal of Applied Physics (Accessed October 12, 2025)