Electronic Properties of GaAs Surfaces Etched in an Electron Cyclotron Resonance Source and Chemically Passivated Using P2S5

Published

January 1, 1998

Author(s)

O Glembocki, J Tuchman, John A. Dagata, K Ko, S Pang, C Stutz

Abstract

Photoreflectance has been used to study the electronic properties of (100) GaAs surfaces exposed to a Cl2/Ar plasma generated by an electron cyclotron resonance source and subsequently passivated by P2S5. The plasma etch shifts the Fermi level of p-GaAs from near the valence band to midgap, but has no effect on n-GaAs. For ion energies below 250 eV, post-etch P2S5 chemical passivation removes the surface etch damage and restores the electronic properties to pre-etch conditions. Above 250 eV, the etch produces subsurface defects which cannot be chemically passivated. Auger electron spectroscopy shows that etching increases As at the GaAs/oxide interface, while passivation reduces it.

Citation

Applied Physics Letters

Volume

73(1)

Pub Type

Journals

Citation

Glembocki, O. , Tuchman, J. , Dagata, J. , Ko, K. , Pang, S. and Stutz, C. (1998), Electronic Properties of GaAs Surfaces Etched in an Electron Cyclotron Resonance Source and Chemically Passivated Using P2S5, Applied Physics Letters (Accessed October 9, 2025)